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Part Details for IRF1010EZPBF by Infineon Technologies AG
Results Overview of IRF1010EZPBF by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
IRF1010EZPBF Information
IRF1010EZPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1010EZPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7168
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Newark | N Channel Mosfet, 60V, 75A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:75A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1010EZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2239 |
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$0.5880 / $1.6300 | Buy Now |
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DISTI #
IRF1010EZPBF-ND
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DigiKey | MOSFET N-CH 60V 75A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
7539 In Stock |
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$0.5769 / $1.2100 | Buy Now |
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DISTI #
63J7168
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Avnet Americas | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7168) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk | 55 Partner Stock |
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$0.6600 / $1.7000 | Buy Now |
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DISTI #
IRF1010EZPBF
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Avnet Americas | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1010EZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.4450 / $0.4900 | Buy Now |
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DISTI #
942-IRF1010EZPBF
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Mouser Electronics | MOSFETs MOSFT 60V 84A 8.5mOhm 58nC RoHS: Compliant | 2689 |
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$0.5760 / $0.9200 | Buy Now |
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DISTI #
E02:0323_00176575
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Arrow Electronics | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2325 | Europe - 9730 |
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$0.4646 / $1.0164 | Buy Now |
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DISTI #
V36:1790_13889888
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Arrow Electronics | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2325 | Americas - 500 |
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$0.4795 / $0.5958 | Buy Now |
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DISTI #
70016935
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RS | MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 6.8 Milliohms, ID 84A, TO-220AB, PD 140W,-55C Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.0700 / $1.2600 | RFQ |
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Future Electronics | Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 4150Tube |
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$0.4900 / $0.5450 | Buy Now |
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Future Electronics | Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube | 60Tube |
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$0.4900 / $0.5550 | Buy Now |
Part Details for IRF1010EZPBF
IRF1010EZPBF CAD Models
IRF1010EZPBF Part Data Attributes
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IRF1010EZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF1010EZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 99 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1010EZPBF
This table gives cross-reference parts and alternative options found for IRF1010EZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010EZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1010EZPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRF1010EZPBF vs IRF1010EZPBF |
| IRF1010EZ | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IRF1010EZPBF vs IRF1010EZ |
IRF1010EZPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1010EZPBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The recommended gate drive voltage for the IRF1010EZPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF1010EZPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
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Handle the device with ESD-protective equipment, and ensure proper grounding and shielding during assembly and testing.