Part Details for IPW65R110CFD by Infineon Technologies AG
Results Overview of IPW65R110CFD by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IPW65R110CFD Information
IPW65R110CFD by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW65R110CFD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
ComSIT USA | Electronic Component RoHS: Not Compliant |
|
|
RFQ | |
|
|
LCSC | 700V 31.2A 110m10V12.7A 277.8W 4V 1 N-channel TO-247-3 MOSFETs ROHS | 942 |
|
$2.3989 / $3.9448 | Buy Now |
|
|
Win Source Electronics | Metal Oxide Semiconductor Field Effect Transistor | 40800 |
|
$3.3530 / $4.3308 | Buy Now |
Part Details for IPW65R110CFD
IPW65R110CFD CAD Models
IPW65R110CFD Part Data Attributes
|
|
IPW65R110CFD
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPW65R110CFD
Infineon Technologies AG
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 845 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 31.2 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 277.8 W | |
| Pulsed Drain Current-Max (IDM) | 99.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW65R110CFD
This table gives cross-reference parts and alternative options found for IPW65R110CFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R110CFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPW65R110CFDFKSA2 | Infineon Technologies AG | $3.8896 | Power Field-Effect Transistor, | IPW65R110CFD vs IPW65R110CFDFKSA2 |
| NTHL110N65S3F | onsemi | $6.4271 | Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 30 A, 110 mΩ, TO-247, TO-247-3, 450-TUBE | IPW65R110CFD vs NTHL110N65S3F |
| IPW65R110CFDFKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPW65R110CFD vs IPW65R110CFDFKSA1 |
| IPW65R110CFD7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IPW65R110CFD vs IPW65R110CFD7 |
IPW65R110CFD Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IPW65R110CFD is -40°C to 150°C.
-
To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to implement proper thermal management, such as heat sinks and thermal interfaces, to keep the junction temperature within the recommended range.
-
The recommended gate drive voltage for the IPW65R110CFD is between 10V and 15V, with a maximum voltage of 20V.
-
To protect the IPW65R110CFD from overvoltage and overcurrent, it is recommended to implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as TVS diodes and current sense resistors, in the application design.
-
The maximum allowed dv/dt for the IPW65R110CFD is 10kV/μs, and it is recommended to limit the dv/dt to 5kV/μs or less to ensure reliable operation.