Part Details for IPW60R099P6XKSA1 by Infineon Technologies AG
Results Overview of IPW60R099P6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPW60R099P6XKSA1 Information
IPW60R099P6XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW60R099P6XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AC9735
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Newark | Mosfet, N-Ch, 600V, 37.9A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:37.9A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.089Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPW60R099P6XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 170 |
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$4.1900 / $7.4200 | Buy Now |
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DISTI #
IPW60R099P6XKSA1-ND
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DigiKey | MOSFET N-CH 600V 37.9A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
643 In Stock |
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Buy Now | |
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DISTI #
IPW60R099P6XKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 37.9A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R099P6XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.7664 / $1.8032 | Buy Now |
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DISTI #
726-IPW60R099P6XKSA1
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Mouser Electronics | MOSFETs HIGH POWER PRICE/PERFORM RoHS: Compliant | 1631 |
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$2.3400 / $5.8300 | Buy Now |
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Rochester Electronics | IPW60R099 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 65 |
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$1.9700 / $2.4700 | Buy Now |
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DISTI #
IPW60R099P6XKSA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 37.9A, 278W, PG-TO247-3 Min Qty: 1 | 36 |
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$3.5200 / $5.6800 | Buy Now |
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DISTI #
TMOS1590
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Rutronik | N-CH 600V 37,9A 99mOhm TO247 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 570 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.8300 / $2.3600 | Buy Now |
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DISTI #
SP001114658
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EBV Elektronik | Trans MOSFET NCH 650V 379A 3Pin TO247 Tube (Alt: SP001114658) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 444 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 600V 37.9A TO247-3 / N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3 | 1600 |
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$3.7768 / $5.6650 | Buy Now |
Part Details for IPW60R099P6XKSA1
IPW60R099P6XKSA1 CAD Models
IPW60R099P6XKSA1 Part Data Attributes
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IPW60R099P6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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IPW60R099P6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 796 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 37.9 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 278 W | |
| Pulsed Drain Current-Max (IDM) | 109 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW60R099P6XKSA1
This table gives cross-reference parts and alternative options found for IPW60R099P6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R099P6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPW60R099P7XKSA1 | Infineon Technologies AG | $2.3595 | Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | IPW60R099P6XKSA1 vs IPW60R099P7XKSA1 |
| IPW60R099CP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPW60R099P6XKSA1 vs IPW60R099CP |
| IPW60R099CPA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPW60R099P6XKSA1 vs IPW60R099CPA |
IPW60R099P6XKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPW60R099P6XKSA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
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The recommended gate resistor value for IPW60R099P6XKSA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, IPW60R099P6XKSA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the IGBTs are matched in terms of threshold voltage and transconductance.
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To protect the IGBT, use a suitable overvoltage protection circuit, such as a voltage clamp or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.