Part Details for IPW60R060C7 by Infineon Technologies AG
Results Overview of IPW60R060C7 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IPW60R060C7 Information
IPW60R060C7 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW60R060C7
| Part # | Distributor | Description | Stock | Price | Buy | |
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LCSC | 60m10V15.9A 162W 1 N-channel TO-247-3 MOSFETs ROHS | 1 |
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$16.4810 / $20.1320 | Buy Now |
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Win Source Electronics | IPW60R060 - 600V COOLMOS N-CHANN | 7500 |
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$3.2324 / $4.8487 | Buy Now |
Part Details for IPW60R060C7
IPW60R060C7 CAD Models
IPW60R060C7 Part Data Attributes
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IPW60R060C7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R060C7
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 159 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 135 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPW60R060C7 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPW60R060C7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 240 W. Additionally, ensure good airflow around the heat sink to prevent overheating.
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The recommended gate drive voltage for the IPW60R060C7 is between 10 V and 15 V. However, the device can tolerate gate drive voltages up to 20 V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
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To protect the IPW60R060C7 from overvoltage and overcurrent, it's recommended to use a voltage regulator and a current limiter in the circuit. Additionally, consider using a fuse or a circuit breaker to prevent damage from excessive current. It's also essential to follow proper PCB design and layout guidelines to prevent voltage spikes and current surges.
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The recommended dead time for the IPW60R060C7 is typically between 100 ns and 500 ns, depending on the specific application and switching frequency. The dead time should be set to ensure that the device is fully turned off before the complementary device is turned on to prevent shoot-through currents.