Part Details for IPP65R660CFDXKSA1 by Infineon Technologies AG
Results Overview of IPP65R660CFDXKSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IPP65R660CFDXKSA1 Information
IPP65R660CFDXKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP65R660CFDXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SP000745026
|
EBV Elektronik | POWER FIELDEFFECT TRANSISTOR 6A ID 650V 066OHM 1ELEMENT NCHANNEL SILICON METALOXIDE SEMICONDUCTOR FET TO220AB (Alt: SP000745026) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IPP65R660CFDXKSA1
IPP65R660CFDXKSA1 CAD Models
IPP65R660CFDXKSA1 Part Data Attributes
|
|
IPP65R660CFDXKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP65R660CFDXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.66 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPP65R660CFDXKSA1 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IPP65R660CFDXKSA1 is -40°C to 150°C, with a maximum junction temperature of 150°C.
-
Proper thermal management can be achieved by ensuring good heat transfer between the module and the heat sink, using a thermal interface material, and maintaining a low thermal resistance between the module and the heat sink.
-
The recommended gate resistance for the IPP65R660CFDXKSA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
-
Yes, the IPP65R660CFDXKSA1 can be used in a parallel configuration, but it requires careful consideration of the module's current sharing, thermal management, and gate drive requirements.
-
The maximum allowable voltage transient for the IPP65R660CFDXKSA1 is 1200 V, with a maximum dv/dt of 10 kV/μs.