Part Details for IPP65R660CFDAAKSA1 by Infineon Technologies AG
Results Overview of IPP65R660CFDAAKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IPP65R660CFDAAKSA1 Information
IPP65R660CFDAAKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP65R660CFDAAKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPP65R660CFDAAKSA1
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Avnet Americas | - Rail/Tube (Alt: IPP65R660CFDAAKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
SP000875802
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EBV Elektronik | Trans MOSFET NCH 650V 6A 3Pin TO220 Tube (Alt: SP000875802) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 71 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPP65R660CFDAAKSA1
IPP65R660CFDAAKSA1 CAD Models
IPP65R660CFDAAKSA1 Part Data Attributes
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IPP65R660CFDAAKSA1
Infineon Technologies AG
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Datasheet
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IPP65R660CFDAAKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.66 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |