Part Details for IPP65R310CFD by Infineon Technologies AG
Results Overview of IPP65R310CFD by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IPP65R310CFD Information
IPP65R310CFD by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP65R310CFD
| Part # | Distributor | Description | Stock | Price | Buy | |
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Cytech Systems Limited | 1749 |
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RFQ | ||
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Vyrian | Transistors | 618 |
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RFQ |
Part Details for IPP65R310CFD
IPP65R310CFD CAD Models
IPP65R310CFD Part Data Attributes
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IPP65R310CFD
Infineon Technologies AG
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Datasheet
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IPP65R310CFD
Infineon Technologies AG
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 11.4 A | |
| Drain-source On Resistance-Max | 0.31 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 34.4 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP65R310CFD
This table gives cross-reference parts and alternative options found for IPP65R310CFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R310CFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP65R310CFDXKSA2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IPP65R310CFD vs IPP65R310CFDXKSA2 |
| TK290P65Y | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor | IPP65R310CFD vs TK290P65Y |
| TK290P65Y,RQ | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 11.5A I(D), 650V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IPP65R310CFD vs TK290P65Y,RQ |
IPP65R310CFD Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPP65R310CFD is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
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The recommended gate resistor value for the IPP65R310CFD is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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To minimize EMI, use a layout with short leads, keep the power stage away from sensitive circuits, and use shielding or filtering techniques, such as ferrite beads or common-mode chokes.
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The maximum allowed voltage transient for the IPP65R310CFD is ±500 V, with a maximum duration of 100 ns.