Part Details for IPP65R045C7 by Infineon Technologies AG
Results Overview of IPP65R045C7 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPP65R045C7 Information
IPP65R045C7 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP65R045C7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPP65R045C7
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Mouser Electronics | MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7 RoHS: Compliant | 807 |
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$5.8900 / $10.2600 | Buy Now |
Part Details for IPP65R045C7
IPP65R045C7 CAD Models
IPP65R045C7 Part Data Attributes
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IPP65R045C7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP65R045C7
Infineon Technologies AG
Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 249 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 46 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 212 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP65R045C7
This table gives cross-reference parts and alternative options found for IPP65R045C7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R045C7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB65R045C7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPP65R045C7 vs IPB65R045C7 |
| IPB65R045C7ATMA1 | Infineon Technologies AG | $9.2258 | Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | IPP65R045C7 vs IPB65R045C7ATMA1 |
| IPP65R045C7XKSA1 | Infineon Technologies AG | $3.4973 | Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP65R045C7 vs IPP65R045C7XKSA1 |
IPP65R045C7 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPP65R045C7 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The maximum current rating for the IPP65R045C7 is 65A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
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Yes, the IPP65R045C7 is suitable for high-frequency switching applications due to its low switching losses and fast switching times. However, it's crucial to consider the device's maximum switching frequency and ensure proper layout and design to minimize parasitic inductances.
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To protect the IPP65R045C7, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, as well as consider using a fuse or a current limiter to prevent damage from excessive currents.