Part Details for IPP60R299CP by Infineon Technologies AG
Results Overview of IPP60R299CP by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPP60R299CP Information
IPP60R299CP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP60R299CP
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPP60R299CP
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Mouser Electronics | MOSFETs N-Ch 650V 11A TO220-3 CoolMOS CP RoHS: Compliant | 659 |
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$1.0400 / $2.5900 | Buy Now |
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Bristol Electronics | 1139 |
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RFQ | ||
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Quest Components | 25 |
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$3.0216 / $4.5324 | Buy Now | |
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ComSIT USA | COOLMOS POWER TRANSISTOR Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for IPP60R299CP
IPP60R299CP CAD Models
IPP60R299CP Part Data Attributes
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IPP60R299CP
Infineon Technologies AG
Buy Now
Datasheet
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IPP60R299CP
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.299 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
IPP60R299CP Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPP60R299CP is -40°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
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The recommended gate resistor value for the IPP60R299CP is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, the IPP60R299CP is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is operated within the recommended voltage and current ratings.
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Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage to the device. Additionally, ensure that the device is operated within the recommended voltage and current ratings.