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Part Details for IPP60R099C6 by Infineon Technologies AG
Results Overview of IPP60R099C6 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPP60R099C6 Information
IPP60R099C6 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP60R099C6
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPP60R099C6
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Mouser Electronics | MOSFETs N-Ch 650V 38A TO220-3 CoolMOS C6 RoHS: Compliant | 633 |
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$2.8100 / $5.4400 | Buy Now |
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DISTI #
73928958
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RS | Transistor, OptiMOS 3 Power, N-channel, normal level, 600V, 37.9A, TO220 Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 44 |
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$4.2200 / $5.6300 | Buy Now |
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Bristol Electronics | 98 |
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RFQ | ||
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Cytech Systems Limited | 2100 |
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RFQ | ||
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Vyrian | Transistors | 161 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 600V 37.9A TO220 | 4177 |
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$4.4634 / $6.6951 | Buy Now |
Part Details for IPP60R099C6
IPP60R099C6 CAD Models
IPP60R099C6 Part Data Attributes
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IPP60R099C6
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP60R099C6
Infineon Technologies AG
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 796 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 37.9 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 278 W | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP60R099C6
This table gives cross-reference parts and alternative options found for IPP60R099C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R099C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPW60R099C6XK | Infineon Technologies AG | $3.3670 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPP60R099C6 vs IPW60R099C6XK |
| IPP60R099C6XKSA1 | Infineon Technologies AG | $4.0096 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP60R099C6 vs IPP60R099C6XKSA1 |
| IPW60R099C6FKSA1 | Infineon Technologies AG | $4.1937 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPP60R099C6 vs IPW60R099C6FKSA1 |
| SPW35N60C3 | Infineon Technologies AG | $5.6533 | Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN | IPP60R099C6 vs SPW35N60C3 |
| IPW60R099C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPP60R099C6 vs IPW60R099C6 |
| STW43NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 package | IPP60R099C6 vs STW43NM60ND |
| STW43NM60NDD | STMicroelectronics | Check for Price | 35A, 600V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN | IPP60R099C6 vs STW43NM60NDD |
IPP60R099C6 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPP60R099C6 is -40°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
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The recommended gate resistor value for the IPP60R099C6 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, the IPP60R099C6 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
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Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.