Part Details for IPP50R140CP by Infineon Technologies AG
Results Overview of IPP50R140CP by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IPP50R140CP Information
IPP50R140CP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP50R140CP
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 730 |
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RFQ | ||
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Quest Components | 584 |
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$1.4652 / $3.5520 | Buy Now | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for IPP50R140CP
IPP50R140CP CAD Models
IPP50R140CP Part Data Attributes
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IPP50R140CP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP50R140CP
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 616 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 192 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP50R140CP
This table gives cross-reference parts and alternative options found for IPP50R140CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP50R140CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP50R140CPXKSA1 | Infineon Technologies AG | $0.9781 | Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP50R140CP vs IPP50R140CPXKSA1 |
| IXFR44N50P | Littelfuse Inc | $11.8408 | Power Field-Effect Transistor, 24A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IPP50R140CP vs IXFR44N50P |
| IXFR44N50Q3 | Littelfuse Inc | $19.4500 | Power Field-Effect Transistor, | IPP50R140CP vs IXFR44N50Q3 |
| IPA50R140CPXKSA1 | Infineon Technologies AG | $2.2947 | Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN | IPP50R140CP vs IPA50R140CPXKSA1 |
| IXFR44N50P | IXYS Corporation | $6.4972 | Power Field-Effect Transistor, 24A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IPP50R140CP vs IXFR44N50P |
IPP50R140CP Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IPP50R140CP is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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The thermal resistance of the IPP50R140CP can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RthJC) is 0.5 K/W, and the case-to-ambient thermal resistance (RthCA) depends on the specific heat sink and cooling system used. You can use the following formula: RthJA = RthJC + RthCA.
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The recommended gate resistor value for the IPP50R140CP depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's recommended to consult the datasheet and application notes for more specific guidance.
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Yes, the IPP50R140CP is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the switching losses, gate charge, and thermal performance when designing the application.
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To protect the IPP50R140CP from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and overcurrent protection (OCP) circuits. Additionally, consider using a gate driver with built-in protection features, such as undervoltage lockout (UVLO) and overcurrent detection.