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Part Details for IPP200N25N3GXKSA1 by Infineon Technologies AG
Results Overview of IPP200N25N3GXKSA1 by Infineon Technologies AG
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IPP200N25N3GXKSA1 Information
IPP200N25N3GXKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP200N25N3GXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3479
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Newark | Mosfet, N Channel, 250V, 64A, To220-3, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:64A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon IPP200N25N3GXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1581 |
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$3.2600 / $6.1700 | Buy Now |
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DISTI #
IPP200N25N3GXKSA1-ND
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DigiKey | MOSFET N-CH 250V 64A TO220-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
5236 In Stock |
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$2.8048 / $6.2500 | Buy Now |
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DISTI #
IPP200N25N3GXKSA1
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Avnet Americas | - Rail/Tube (Alt: IPP200N25N3GXKSA1) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube | 444 |
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$2.5816 / $2.7333 | Buy Now |
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DISTI #
47W3479
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Avnet Americas | Power MOSFET, N Channel, 250 V, 64 A, 0.0175 ohm, TO-220, Through Hole - Bulk (Alt: 47W3479) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 113 Partner Stock |
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$3.8600 / $6.4200 | Buy Now |
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DISTI #
726-IPP200N25N3GXKSA
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Mouser Electronics | MOSFETs N-Ch 250V 64A TO220-3 OptiMOS 3 RoHS: Compliant | 611 |
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$3.1200 / $6.2500 | Buy Now |
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DISTI #
E02:0323_00826058
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Arrow Electronics | Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2444 | Europe - 2175 |
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$2.8398 / $6.2355 | Buy Now |
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DISTI #
V36:1790_06377745
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Arrow Electronics | Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks Date Code: 2436 | Americas - 560 |
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$2.7980 | Buy Now |
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Future Electronics | Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks Container: Tube | 500Tube |
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$2.8200 / $2.9500 | Buy Now |
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Future Electronics | Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 16 Weeks Container: Tube | 0Tube |
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$2.8200 / $3.0400 | Buy Now |
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DISTI #
88032369
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Verical | Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 500 Package Multiple: 500 Date Code: 2444 | Americas - 741500 |
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$3.5924 | Buy Now |
Part Details for IPP200N25N3GXKSA1
IPP200N25N3GXKSA1 CAD Models
IPP200N25N3GXKSA1 Part Data Attributes
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IPP200N25N3GXKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP200N25N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 64 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 256 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP200N25N3GXKSA1
This table gives cross-reference parts and alternative options found for IPP200N25N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP200N25N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP220N25NFDAKSA1 | Infineon Technologies AG | $1.6757 | Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP200N25N3GXKSA1 vs IPP220N25NFDAKSA1 |
IPP200N25N3GXKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IPP200N25N3GXKSA1 is 175°C, as specified in the datasheet.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
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To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
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The maximum allowed drain-source voltage (Vds) for the IPP200N25N3GXKSA1 is 250V, as specified in the datasheet.