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Part Details for IPP110N20N3G by Infineon Technologies AG
Results Overview of IPP110N20N3G by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPP110N20N3G Information
IPP110N20N3G by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP110N20N3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69115402
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Verical | Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 2301 | Americas - 2440 |
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$7.2322 / $8.9053 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 1226 |
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$6.0000 / $12.0000 | Buy Now |
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ComSIT USA | OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Cytech Systems Limited | 1400 |
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RFQ | ||
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Vyrian | Transistors | 969 |
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RFQ |
Part Details for IPP110N20N3G
IPP110N20N3G CAD Models
IPP110N20N3G Part Data Attributes
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IPP110N20N3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPP110N20N3G
Infineon Technologies AG
Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 88 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 352 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP110N20N3G
This table gives cross-reference parts and alternative options found for IPP110N20N3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP110N20N3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP110N20NAAKSA1 | Infineon Technologies AG | $3.5699 | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP110N20N3G vs IPP110N20NAAKSA1 |
| IPI110N20N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPP110N20N3G vs IPI110N20N3G |
| IPP110N20NA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP110N20N3G vs IPP110N20NA |
IPP110N20N3G Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IPP110N20N3G is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
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To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 280W for the IPP110N20N3G.
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The recommended gate resistor value for the IPP110N20N3G is between 10Ω and 20Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon support for more information.
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Yes, the IPP110N20N3G is suitable for high-reliability applications. It's manufactured using Infineon's proprietary OptiMOS technology, which ensures high reliability and ruggedness. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
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To protect the IPP110N20N3G from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a gate driver with built-in overvoltage protection and undervoltage lockout (UVLO) to prevent the device from operating outside its specified voltage range.