Part Details for IPP032N06N3G by Infineon Technologies AG
Results Overview of IPP032N06N3G by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPP032N06N3G Information
IPP032N06N3G by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP032N06N3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2000 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 50 |
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$1.8188 / $2.9100 | Buy Now |
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Quest Components | 120 A, 60 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 40 |
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$1.4550 / $3.8800 | Buy Now |
Part Details for IPP032N06N3G
IPP032N06N3G CAD Models
IPP032N06N3G Part Data Attributes
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IPP032N06N3G
Infineon Technologies AG
Buy Now
Datasheet
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IPP032N06N3G
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 235 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 188 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPP032N06N3G Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IPP032N06N3G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, Infineon recommends limiting the device's operating conditions to V_DS ≤ 30V, I_D ≤ 32A, and T_J ≤ 150°C to ensure reliable operation.
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To calculate the thermal resistance of the IPP032N06N3G in a specific application, you need to consider the device's junction-to-case thermal resistance (R_th_JC), case-to-ambient thermal resistance (R_th_CA), and the thermal interface material's thermal resistance (R_th_TIM). You can use the following equation: R_th_JA = R_th_JC + R_th_CA + R_th_TIM. The datasheet provides the R_th_JC value, and you can estimate the other values based on your application's thermal design.
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The recommended gate drive voltage for the IPP032N06N3G is typically between 4.5V and 10V, with a maximum gate-source voltage (V_GS) of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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To ensure the IPP032N06N3G's reliability in high-temperature applications, it's essential to follow proper thermal design and management practices. This includes selecting a suitable heat sink, ensuring good thermal interface material (TIM) contact, and monitoring the device's junction temperature (T_J). Additionally, consider using a thermistor or temperature sensor to monitor the device's temperature and implement over-temperature protection (OTP) if necessary.
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The IPP032N06N3G has an integrated electrostatic discharge (ESD) protection diode, which provides a certain level of protection against ESD events. However, it's still recommended to follow proper ESD handling and protection practices during device handling, assembly, and testing. This includes using ESD-safe equipment, wrist straps, and mats, as well as implementing ESD protection circuits in the application design.