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Part Details for IPL65R195C7 by Infineon Technologies AG
Results Overview of IPL65R195C7 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPL65R195C7 Information
IPL65R195C7 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPL65R195C7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPL65R195C7
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Mouser Electronics | MOSFETs HIGH POWER BEST IN CLASS RoHS: Compliant | 3439 |
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$1.1700 / $2.8500 | Buy Now |
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LCSC | 650V 8A 0.19510V2.9A 75W 3.5V 1 N-channel VSON-4(8x8) MOSFETs ROHS | 5 |
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$5.0572 / $7.3368 | Buy Now |
Part Details for IPL65R195C7
IPL65R195C7 CAD Models
IPL65R195C7 Part Data Attributes
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IPL65R195C7
Infineon Technologies AG
Buy Now
Datasheet
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IPL65R195C7
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 650V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | VSON-4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PSSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2A | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 49 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPL65R195C7 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPL65R195C7 is -40°C to 150°C.
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Yes, IPL65R195C7 is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.
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The typical switching frequency for IPL65R195C7 is up to 100 kHz, but it can be operated at higher frequencies with proper design and layout considerations.
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Yes, IPL65R195C7 is designed for high-reliability applications, such as automotive, industrial, and medical devices, due to its robust design and manufacturing process.
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Yes, IPL65R195C7 is compatible with lead-free soldering processes, making it suitable for modern manufacturing environments.