Part Details for IPI086N10N3GXKSA1 by Infineon Technologies AG
Results Overview of IPI086N10N3GXKSA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IPI086N10N3GXKSA1 Information
IPI086N10N3GXKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPI086N10N3GXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1700
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Newark | Mosfet, N-Ch, 100V, 80A, To-262, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0074Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.7V, Power Rohs Compliant: Yes |Infineon IPI086N10N3GXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 500 |
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$0.6230 / $2.2000 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1-ND
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DigiKey | MOSFET N-CH 100V 80A TO262-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
58 In Stock |
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$0.6232 / $2.2000 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1
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Avnet Americas | - Rail/Tube (Alt: IPI086N10N3GXKSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 500 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$0.5150 / $0.5452 | Buy Now |
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DISTI #
87801805
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Verical | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 356 Package Multiple: 1 Date Code: 2001 | Americas - 465 |
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$0.6544 / $1.0555 | Buy Now |
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Rochester Electronics | IPI086N10 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 465 |
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$0.5235 / $0.8444 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1
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TME | Transistor: N-MOSFET, unipolar, 100V, 80A, 125W, PG-TO262-3 Min Qty: 1 | 138 |
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$0.6500 / $1.7000 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1
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IBS Electronics | SINGLE N-CHANNEL 100 V 8.6 MOHM 42 NC OPTIMOS™, POWER MOSFET - I2PAK Min Qty: 500 Package Multiple: 1 | 0 |
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$0.7540 / $0.7995 | Buy Now |
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DISTI #
SP000683070
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EBV Elektronik | Power MOSFET N Channel 100 V 80 A 00074 ohm TO262 Through Hole (Alt: SP000683070) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 431 |
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RFQ |
Part Details for IPI086N10N3GXKSA1
IPI086N10N3GXKSA1 CAD Models
IPI086N10N3GXKSA1 Part Data Attributes
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IPI086N10N3GXKSA1
Infineon Technologies AG
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Datasheet
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IPI086N10N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | GREEN, PLASTIC, TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0086 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPI086N10N3GXKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPI086N10N3GXKSA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPI086N10N3GXKSA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, IPI086N10N3GXKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.