Part Details for IPG20N06S4L26ATMA1 by Infineon Technologies AG
Results Overview of IPG20N06S4L26ATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPG20N06S4L26ATMA1 Information
IPG20N06S4L26ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPG20N06S4L26ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
50Y2049
|
Newark | Mosfet, Dual N-Ch, 60V, 20A, 33W, Tdson, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:20A, Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Infineon IPG20N06S4L26ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 12000 |
|
$0.4960 / $0.9600 | Buy Now |
DISTI #
86AK5252
|
Newark | Mosfet, N-Ch, 60V, 20A, Tdson Rohs Compliant: Yes |Infineon IPG20N06S4L26ATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.4270 | Buy Now |
DISTI #
IPG20N06S4L26ATMA1CT-ND
|
DigiKey | MOSFET 2N-CH 60V 20A 8TDSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3540 In Stock |
|
$0.3990 / $1.6100 | Buy Now |
DISTI #
50Y2049
|
Avnet Americas | Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.021 ohm - Product that comes on tape, but is not reeled (Alt: 50Y2049) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 12000 Partner Stock |
|
$0.5960 / $0.7800 | Buy Now |
DISTI #
IPG20N06S4L26ATMA1
|
Avnet Americas | Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.021 ohm - Tape and Reel (Alt: IPG20N06S4L26ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3693 / $0.3885 | Buy Now |
DISTI #
IPG20N06S4L26ATMA1
|
Avnet Americas | Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.021 ohm - Tape and Reel (Alt: IPG20N06S4L26ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$0.3671 / $0.3926 | Buy Now |
DISTI #
726-IPG20N06S4L26ATM
|
Mouser Electronics | MOSFETs N-Ch 60V 20A TDSON-8 OptiMOS-T2 RoHS: Compliant | 74589 |
|
$0.3990 / $0.8600 | Buy Now |
DISTI #
V72:2272_06384789
|
Arrow Electronics | Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2238 Container: Cut Strips | Americas - 1485 |
|
$0.4285 / $0.5117 | Buy Now |
|
Future Electronics | Dual N-Channel 60 V 26 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8-4 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks Container: Reel | 15000Reel |
|
$0.4350 | Buy Now |
DISTI #
85987168
|
Verical | Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101 Min Qty: 555 Package Multiple: 1 Date Code: 2301 | Americas - 131467 |
|
$0.6758 | Buy Now |
Part Details for IPG20N06S4L26ATMA1
IPG20N06S4L26ATMA1 CAD Models
IPG20N06S4L26ATMA1 Part Data Attributes
|
IPG20N06S4L26ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPG20N06S4L26ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TDSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 35 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
IPG20N06S4L26ATMA1 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IPG20N06S4L26ATMA1 is -55°C to 175°C.
-
To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
-
To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections close together, and use a ground plane to reduce inductance.
-
Yes, the IPG20N06S4L26ATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and consider the device's switching characteristics.
-
Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage from voltage and current surges.