Part Details for IPG20N04S4L11ATMA1 by Infineon Technologies AG
Results Overview of IPG20N04S4L11ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPG20N04S4L11ATMA1 Information
IPG20N04S4L11ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPG20N04S4L11ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
98Y6061
|
Newark | Mosfet, Dual N Ch, 40V, 20A, Tdson-8, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0101Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Powerrohs Compliant: Yes |Infineon IPG20N04S4L11ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.5190 / $1.6500 | Buy Now |
|
DISTI #
IPG20N04S4L11ATMA1CT-ND
|
DigiKey | MOSFET 2N-CH 40V 20A 8TDSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
38091 In Stock |
|
$0.3917 / $1.6200 | Buy Now |
|
DISTI #
IPG20N04S4L11ATMA1
|
Avnet Americas | Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 0.0101 ohm - Tape and Reel (Alt: IPG20N04S4L11ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3626 / $0.3814 | Buy Now |
|
DISTI #
71239284
|
Verical | Trans MOSFET N-CH 40V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101 Min Qty: 61 Package Multiple: 1 Date Code: 2333 | Americas - 20000 |
|
$0.4891 / $1.5000 | Buy Now |
|
DISTI #
IPG20N04S4L11ATMA1
|
IBS Electronics | IPG20N04S4L11ATMA1 by Infineon SCT is a 40V N-channel MOSFET with low RDS(on) of 11mΩ, , optimized for high-speed switching, suitable for automotive applications, and operates up to 175°, C. Min Qty: 5000 Package Multiple: 1 | 0 |
|
$0.4810 | Buy Now |
|
|
Chip 1 Exchange | INSTOCK | 3000 |
|
RFQ | |
|
DISTI #
IPG20N04S4L11ATMA1
|
Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 20000 |
|
$0.4090 / $1.5000 | Buy Now |
|
DISTI #
SP000705564
|
EBV Elektronik | Dual MOSFET N Channel 40 V 40 V 20 A 20 A 00101 ohm (Alt: SP000705564) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 40367 |
|
RFQ | |
|
|
Win Source Electronics | MOSFET 2N-CH 40V 20A 8TDSON / Mosfet Array 2 N-Channel (Dual) 40V 20A 41W Surface Mount PG-TDSON-8-4 | 14188 |
|
$0.5620 / $0.8431 | Buy Now |
Part Details for IPG20N04S4L11ATMA1
IPG20N04S4L11ATMA1 CAD Models
IPG20N04S4L11ATMA1 Part Data Attributes
|
|
IPG20N04S4L11ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPG20N04S4L11ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 40V, 0.0116ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0116 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
IPG20N04S4L11ATMA1 Frequently Asked Questions (FAQ)
-
The maximum junction temperature (Tj) for the IPG20N04S4L11ATMA1 is 175°C, as specified in the datasheet.
-
Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good thermal contact between the device and the heat sink. Additionally, the device should be operated within the specified thermal boundaries.
-
The recommended gate resistor value for the IPG20N04S4L11ATMA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
-
Yes, the IPG20N04S4L11ATMA1 is a qualified device for high-reliability applications, such as automotive and industrial systems, due to its robust design and manufacturing process.
-
To protect the device from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.