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Transistors / Power Field-Effect Transistors / IPD95R1K2P7ATMA1
Datasheets
IPD95R1K2P7ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPD95R1K2P7ATMA1 by Infineon Technologies AG

Results Overview of IPD95R1K2P7ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

IPD95R1K2P7ATMA1 Information

IPD95R1K2P7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD95R1K2P7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPD95R1K2P7ATMA1CT-ND
DigiKey MOSFET N-CH 950V 6A TO252-3 Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $1.9100
  • 10 $1.2170
  • 100 $0.8198
  • 500 $0.6497
  • 1,000 $0.6031
  • 2,500 $0.5197
  • 5,000 $0.4928
$0.4928 / $1.9100 Buy Now
DISTI # IPD95R1K2P7ATMA1
Avnet Americas Power MOSFET, N Channel, 950 V, 6 A, 1.03 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD95R1K2P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4829
  • 5,000 $0.4749
  • 10,000 $0.4725
  • 15,000 $0.4701
  • 20,000 $0.4676
$0.4676 / $0.4829 Buy Now
DISTI # 726-IPD95R1K2P7ATMA1
Mouser Electronics MOSFETs LOW POWER_NEW RoHS: Compliant 0
  • 1 $1.8800
  • 10 $1.2000
  • 100 $0.8070
  • 500 $0.6400
  • 1,000 $0.5900
  • 2,500 $0.5190
  • 5,000 $0.4920
$0.4920 / $1.8800 Order Now
DISTI # 85986490
Verical Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) DPAK T/R Min Qty: 449 Package Multiple: 1 Date Code: 2201 Americas - 3577
  • 449 $0.8366
  • 500 $0.7530
  • 1,000 $0.6944
  • 10,000 $0.6191
  • 100,000 $0.5188
$0.5188 / $0.8366 Buy Now
DISTI # 75723570
Verical Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) DPAK T/R Min Qty: 50 Package Multiple: 1 Date Code: 2337 Americas - 2380
  • 50 $2.0400
  • 100 $1.3000
  • 200 $1.2200
  • 500 $0.8790
  • 1,000 $0.8430
  • 2,000 $0.7010
$0.7010 / $2.0400 Buy Now
Rochester Electronics IPD95R1K2P7 - LOW POWER_NEW RoHS: Compliant Status: Active Min Qty: 1 3577
  • 100 $0.6693
  • 500 $0.6024
  • 1,000 $0.5555
  • 10,000 $0.4953
  • 100,000 $0.4150
$0.4150 / $0.6693 Buy Now
Future Electronics 950Volt, 6Amp, 1200mohm, DPAK with Zener diode Min Qty: 2500 Package Multiple: 2500 17500
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  • 2,500 $0.4850
  • 5,000 $0.4800
  • 7,500 $0.4750
$0.4750 / $0.4850 Buy Now
DISTI # SP001792314
EBV Elektronik Power MOSFET N Channel 950 V 6 A 103 ohm TO252 DPAK Surface Mount (Alt: SP001792314) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 15000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 12500
  • 2,500 $1.0200
  • 12,500 $0.9415
$0.9415 / $1.0200 Buy Now

Part Details for IPD95R1K2P7ATMA1

IPD95R1K2P7ATMA1 CAD Models

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IPD95R1K2P7ATMA1 Part Data Attributes

Parametric Data
IPD95R1K2P7ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD95R1K2P7ATMA1 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 11 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 950 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 16 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IPD95R1K2P7ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPD95R1K2P7ATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.

  • A 2-layer or 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the power traces short and wide, and use vias to connect the power planes.

  • Use a TVS diode or a zener diode to protect against overvoltage, and a fuse or a current limiter to protect against overcurrent.

  • The recommended gate drive voltage for IPD95R1K2P7ATMA1 is 10-15V, with a maximum gate current of 1A.

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