Datasheets
IPD90P03P4L-04 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD90P03P4L-04 by Infineon Technologies AG

Results Overview of IPD90P03P4L-04 by Infineon Technologies AG

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IPD90P03P4L-04 Information

IPD90P03P4L-04 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD90P03P4L-04

Part # Distributor Description Stock Price Buy
Bristol Electronics   2231
RFQ
DISTI # SMC-IPD90P03P4L-04
Sensible Micro Corporation TRANS IPD90P03P4L-04 TO252 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2020+ 192
RFQ
Win Source Electronics OptiMOS-P2 Power-Transistor 17500
  • 26 $2.2693
  • 55 $2.1229
  • 85 $2.0497
  • 122 $1.9034
  • 158 $1.8301
  • 198 $1.7569
$1.7569 / $2.2693 Buy Now

Part Details for IPD90P03P4L-04

IPD90P03P4L-04 CAD Models

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IPD90P03P4L-04 Part Data Attributes

IPD90P03P4L-04 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD90P03P4L-04 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 370 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0068 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 137 W
Pulsed Drain Current-Max (IDM) 360 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

IPD90P03P4L-04 Related Parts

IPD90P03P4L-04 Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to ensure good heat dissipation.

  • The device requires a stable input voltage (VIN) and a proper biasing of the gate-source voltage (VGS) to ensure optimal performance. A voltage regulator and a voltage divider can be used to achieve this.

  • Monitor the junction temperature (TJ), drain-source voltage (VDS), and drain current (ID) to prevent overheating. Ensure that the device is operated within the recommended operating conditions.

  • Use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.

  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body or pins, not the leads, and avoid bending or flexing the leads.

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