Part Details for IPD85P04P4L06ATMA1 by Infineon Technologies AG
Results Overview of IPD85P04P4L06ATMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
IPD85P04P4L06ATMA1 Information
IPD85P04P4L06ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD85P04P4L06ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2839465
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Farnell | MOSFET, AEC-Q100, P-CH, -40V, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 5 Weeks, 1 Days Container: Cut Tape | 34071 |
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$0.6519 / $1.5699 | Buy Now |
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DISTI #
2839465RL
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Farnell | MOSFET, AEC-Q100, P-CH, -40V, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 5 Weeks, 1 Days Container: Reel | 34071 |
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$0.6519 / $1.0271 | Buy Now |
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DISTI #
4384138
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Farnell | MOSFET, P-CHANNEL, 40V, 85A, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 5 Weeks, 1 Days Container: Reel | 0 |
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$0.6971 / $0.7224 | Buy Now |
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DISTI #
IPD85P04P4L06ATMA1
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Avnet Americas | Trans MOSFET P-CH 40V 85A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD85P04P4L06ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.8390 / $0.8565 | Buy Now |
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DISTI #
SP000842056
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EBV Elektronik | Trans MOSFET PCH 40V 85A 3Pin2Tab TO252 (Alt: SP000842056) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD85P04P4L06ATMA1
IPD85P04P4L06ATMA1 CAD Models
IPD85P04P4L06ATMA1 Part Data Attributes
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IPD85P04P4L06ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPD85P04P4L06ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 85A I(D), 40V, 0.0064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.0064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
IPD85P04P4L06ATMA1 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
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To ensure reliable operation in high-temperature environments, it is essential to follow the recommended thermal design guidelines, use a heat sink or thermal pad, and ensure good airflow around the device. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
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Critical parameters to monitor for reliability and fault detection include junction temperature, voltage, current, and power dissipation. Monitoring these parameters can help detect potential faults and prevent damage to the device.
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When selecting a gate driver for the IPD85P04P4L06ATMA1, consider the driver's output current capability, rise and fall times, and voltage rating. Ensure the driver can provide the required current and voltage to properly drive the device's gate.
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When handling the IPD85P04P4L06ATMA1, follow standard electrostatic discharge (ESD) precautions, such as wearing an ESD strap, using an ESD mat, and handling the device by the body rather than the leads. Avoid touching the device's pins or exposed die to prevent damage.