Part Details for IPD85P04P407ATMA1 by Infineon Technologies AG
Results Overview of IPD85P04P407ATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
IPD85P04P407ATMA1 Information
IPD85P04P407ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD85P04P407ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9052
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Newark | Mosfet, Aec-Q101, P-Ch, -40V, To-252, Transistor Polarity:P Channel, Continuous Drain Current Id:-85A, Drain Source Voltage Vds:-40V, On Resistance Rds(On):0.0073Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Rohs Compliant: Yes |Infineon IPD85P04P407ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
IPD85P04P407ATMA1
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Avnet Americas | Trans MOSFET P-CH 40V 85A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD85P04P407ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.5121 / $0.5477 | Buy Now |
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DISTI #
SP000842066
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EBV Elektronik | Trans MOSFET PCH 40V 85A 3Pin2Tab TO252 (Alt: SP000842066) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 40V 85A 88W 7.3m10V85A 4V 1 piece P-channel TO-252-3-313 MOSFETs ROHS | 20 |
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$2.6040 / $4.2138 | Buy Now |
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Vyrian | Transistors | 833 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH TO252-3 / Trans MOSFET P-CH 40V 85A Automotive 3-Pin(2+Tab) DPAK T/R | 9898 |
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$2.1148 / $3.1721 | Buy Now |
Part Details for IPD85P04P407ATMA1
IPD85P04P407ATMA1 CAD Models
IPD85P04P407ATMA1 Part Data Attributes
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IPD85P04P407ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD85P04P407ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 85A I(D), 40V, 0.0073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.0073 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
IPD85P04P407ATMA1 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
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Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement thermal management techniques such as heat sinks, thermal interfaces, and airflow to maintain a safe operating temperature.
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The IPD85P04P407ATMA1 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
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Yes, the IPD85P04P407ATMA1 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a qualified process. However, additional testing and validation may be required for specific applications.
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Use a systematic approach to troubleshoot issues, starting with a review of the device's operating conditions, PCB layout, and component selection. Use oscilloscopes, logic analyzers, or other diagnostic tools to identify the root cause of the issue. Consult the datasheet, application notes, and Infineon's technical support resources for guidance.