-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD70P04P4L08ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
51AH5909
|
Newark | Mosfet, P-Ch, 40V, 70A, To-252, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:70A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD70P04P4L08ATMA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 11799 |
|
$0.5790 | Buy Now |
DISTI #
86AK5230
|
Newark | Mosfet, P-Ch, 40V, 70A, To-252 Rohs Compliant: Yes |Infineon IPD70P04P4L08ATMA2 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.5510 / $0.5740 | Buy Now |
DISTI #
448-IPD70P04P4L08ATMA2CT-ND
|
DigiKey | MOSFET P-CH 40V 70A TO252-3 Min Qty: 1 Lead time: 9 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9991 In Stock |
|
$0.5136 / $1.4300 | Buy Now |
DISTI #
51AH5909
|
Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 51AH5909) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 11799 Partner Stock |
|
$0.7840 / $1.4100 | Buy Now |
DISTI #
IPD70P04P4L08ATMA2
|
Avnet Americas | - Tape and Reel (Alt: IPD70P04P4L08ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.4705 / $0.5033 | Buy Now |
DISTI #
726-IPD70P04P4L08ATM
|
Mouser Electronics | MOSFETs MOSFET_(20V 40V) RoHS: Compliant | 25726 |
|
$0.5130 / $1.3600 | Buy Now |
|
Future Electronics | P Channel 40 V 70 A 7.8 mOhm SMT Enhancement Mode Mosfet - PG-TO252-3-313 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 2500Reel |
|
$0.4850 / $0.5000 | Buy Now |
DISTI #
85986154
|
Verical | Trans MOSFET P-CH 40V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 432 Package Multiple: 1 Date Code: 2301 | Americas - 14169 |
|
$0.5393 / $0.8698 | Buy Now |
DISTI #
83139233
|
Verical | Trans MOSFET P-CH 40V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 87 Package Multiple: 1 | Americas - 11799 |
|
$0.7796 / $0.9897 | Buy Now |
DISTI #
88151367
|
Verical | Trans MOSFET P-CH 40V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 2500 Package Multiple: 2500 Date Code: 2510 | Americas - 10000 |
|
$0.6615 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPD70P04P4L08ATMA2
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD70P04P4L08ATMA2
Infineon Technologies AG
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Reference Standard | AEC-Q101; IEC-68-1 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
The maximum operating temperature range for IPD70P04P4L08ATMA2 is -40°C to 150°C.
Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
A recommended PCB layout for IPD70P04P4L08ATMA2 includes a solid ground plane, short and wide traces for power and signal lines, and a heat sink attached to the device.
Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a fuse or a current sense resistor.
The recommended gate drive voltage for IPD70P04P4L08ATMA2 is between 10V and 15V, with a maximum gate drive current of 1A.