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Part Details for IPD60R180C7ATMA1 by Infineon Technologies AG
Results Overview of IPD60R180C7ATMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IPD60R180C7ATMA1 Information
IPD60R180C7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD60R180C7ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39AH8909
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Newark | Mosfet, N-Ch, 600V, 13A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPD60R180C7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 17 |
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$1.0500 / $1.2500 | Buy Now |
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DISTI #
448-IPD60R180C7ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 13A TO252-3 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1694 In Stock |
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$1.0094 / $2.7000 | Buy Now |
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DISTI #
IPD60R180C7ATMA1
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Avnet Americas | MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPD60R180C7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.8679 / $0.9034 | Buy Now |
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DISTI #
726-IPD60R180C7ATMA1
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Mouser Electronics | MOSFETs HIGH POWER_NEW RoHS: Compliant | 4792 |
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$0.9910 / $2.5500 | Buy Now |
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DISTI #
75723432
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Verical | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R Min Qty: 22 Package Multiple: 1 Date Code: 2346 | Americas - 2495 |
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$1.3700 / $2.3400 | Buy Now |
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DISTI #
IPD60R180C7ATMA1
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2495 |
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$1.2300 / $2.3400 | Buy Now |
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DISTI #
SP001277630
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EBV Elektronik | MOS Power Transistors HV 200V (Alt: SP001277630) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD60R180C7ATMA1
IPD60R180C7ATMA1 CAD Models
IPD60R180C7ATMA1 Part Data Attributes
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IPD60R180C7ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD60R180C7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 53 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD60R180C7ATMA1
This table gives cross-reference parts and alternative options found for IPD60R180C7ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R180C7ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP60R170CFD7XKSA1 | Infineon Technologies AG | $1.3586 | Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IPD60R180C7ATMA1 vs IPP60R170CFD7XKSA1 |
| IPD60R170CFD7ATMA1 | Infineon Technologies AG | $2.1449 | Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | IPD60R180C7ATMA1 vs IPD60R170CFD7ATMA1 |
| IPW60R180C7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | IPD60R180C7ATMA1 vs IPW60R180C7 |
| IPD60R180C7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | IPD60R180C7ATMA1 vs IPD60R180C7 |
IPD60R180C7ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD60R180C7ATMA1 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The recommended gate resistor value for the IPD60R180C7ATMA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency.
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Yes, the IPD60R180C7ATMA1 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to follow the recommended layout and decoupling guidelines to minimize parasitic inductance and capacitance.
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To protect the IPD60R180C7ATMA1 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.