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Part Details for IPD60N10S4L-12 by Infineon Technologies AG
Results Overview of IPD60N10S4L-12 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD60N10S4L-12 Information
IPD60N10S4L-12 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD60N10S4L-12
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPD60N10S4L-12
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Mouser Electronics | MOSFETs N-Ch 100V 60A DPAK-2 RoHS: Compliant | 20822 |
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$0.5690 / $1.5500 | Buy Now |
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DISTI #
79005714
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Verical | Trans MOSFET N-CH 100V 60A T/R Automotive AEC-Q101 Min Qty: 45 Package Multiple: 1 Date Code: 2201 | Americas - 2500 |
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$1.4242 / $1.7031 | Buy Now |
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Bristol Electronics | Min Qty: 4 | 460 |
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$0.6187 / $1.6500 | Buy Now |
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Quest Components | 60A, 100V, 0.015OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252 | 2000 |
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$1.5465 / $3.0930 | Buy Now |
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Quest Components | 60A, 100V, 0.015OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252 | 368 |
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$0.7700 / $2.2000 | Buy Now |
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Quest Components | 60A, 100V, 0.015OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252 | 259 |
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$0.7715 / $1.4288 | Buy Now |
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Win Source Electronics | OptiMOSTM-T2 Power-Transistor | 25000 |
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$0.5941 / $0.7672 | Buy Now |
Part Details for IPD60N10S4L-12
IPD60N10S4L-12 CAD Models
IPD60N10S4L-12 Part Data Attributes
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IPD60N10S4L-12
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD60N10S4L-12
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
IPD60N10S4L-12 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD60N10S4L-12 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The recommended gate resistor value for the IPD60N10S4L-12 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Yes, the IPD60N10S4L-12 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
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The recommended dead time for the IPD60N10S4L-12 when used in a half-bridge configuration is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency.