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Part Details for IPD50P04P4L11ATMA2 by Infineon Technologies AG
Results Overview of IPD50P04P4L11ATMA2 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPD50P04P4L11ATMA2 Information
IPD50P04P4L11ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50P04P4L11ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AH9597
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Newark | Mosfet, P-Ch, 40V, 50A, To-252, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD50P04P4L11ATMA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 71131 |
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$0.6020 / $1.3700 | Buy Now |
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DISTI #
86AK5216
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Newark | Mosfet, P-Ch, 40V, 50A, To-252 Rohs Compliant: Yes |Infineon IPD50P04P4L11ATMA2 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4880 / $0.5070 | Buy Now |
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DISTI #
448-IPD50P04P4L11ATMA2CT-ND
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DigiKey | MOSFET P-CH 40V 50A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2804 In Stock |
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$0.4389 / $1.7600 | Buy Now |
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DISTI #
IPD50P04P4L11ATMA2
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Avnet Americas | Power MOSFET, P Channel, 40 V, 50 A, 0.0082 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD50P04P4L11ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 12500 |
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$0.3992 / $0.4199 | Buy Now |
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DISTI #
726-IPD50P04P4L11AT2
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Mouser Electronics | MOSFETs MOSFET_(20V 40V) RoHS: Compliant | 7038 |
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$0.4830 / $1.7300 | Buy Now |
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Future Electronics | IPD50P04P4L11 Series 40 V 50 A 10.6 mOhm 58 W 45 nC P-Channel MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 5000Reel |
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$0.4500 / $0.4650 | Buy Now |
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DISTI #
85990863
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Verical | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 514 Package Multiple: 1 Date Code: 2301 | Americas - 28333 |
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$0.7303 | Buy Now |
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DISTI #
71239530
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Verical | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 49 Package Multiple: 1 Date Code: 2320 | Americas - 2233 |
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$0.5790 / $1.1100 | Buy Now |
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Rochester Electronics | IPD50P04P4L-11 - MOSFET_(20V,40V) RoHS: Compliant Status: Active Min Qty: 1 | 28333 |
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$0.3622 / $0.5842 | Buy Now |
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Future Electronics | IPD50P04P4L11 Series 40 V 50 A 10.6 mOhm 58 W 45 nC P-Channel MOSFET - TO-252 Min Qty: 2500 Package Multiple: 2500 |
5000 null |
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$0.4700 / $0.4850 | Buy Now |
Part Details for IPD50P04P4L11ATMA2
IPD50P04P4L11ATMA2 CAD Models
IPD50P04P4L11ATMA2 Part Data Attributes
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IPD50P04P4L11ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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IPD50P04P4L11ATMA2
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0106 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 74 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 58 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
IPD50P04P4L11ATMA2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPD50P04P4L11ATMA2 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
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A recommended PCB layout for IPD50P04P4L11ATMA2 includes a solid ground plane, wide power traces, and a decoupling capacitor (e.g., 100nF) close to the device.
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Yes, IPD50P04P4L11ATMA2 is suitable for high-reliability applications, such as automotive and industrial systems, due to its robust design and manufacturing process.
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The device should be powered up and down slowly (e.g., 10ms) to prevent voltage spikes and ensure proper operation.