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Part Details for IPD50P04P4L11ATMA1 by Infineon Technologies AG
Results Overview of IPD50P04P4L11ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD50P04P4L11ATMA1 Information
IPD50P04P4L11ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50P04P4L11ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2443434
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Farnell | MOSFET, P CH, -40V, -50A, TO-252-3 RoHS: Compliant Min Qty: 5 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 121034 |
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$0.5965 / $0.7010 | Buy Now |
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DISTI #
2443434RL
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Farnell | MOSFET, P CH, -40V, -50A, TO-252-3 RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel | 121034 |
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$0.5965 / $0.6219 | Buy Now |
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DISTI #
4318852
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Farnell | MOSFET, P-CH, 40V, 50A, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 51 Weeks, 1 Days Container: Reel | 0 |
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$0.6648 / $0.7024 | Buy Now |
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DISTI #
IPD50P04P4L11ATMA1
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Avnet Americas | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50P04P4L11ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.4226 / $0.4502 | Buy Now |
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DISTI #
V72:2272_06384843
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Arrow Electronics | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2239 Container: Cut Strips | Americas - 3 |
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$0.9583 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0106OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 619 |
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$0.4688 / $1.1250 | Buy Now |
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Chip 1 Exchange | INSTOCK | 52500 |
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RFQ | |
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DISTI #
SP000671156
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EBV Elektronik | Trans MOSFET PCH 40V 50A 3Pin2Tab TO252 (Alt: SP000671156) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 33609 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 40V 50A TO252-3 | 25655 |
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$1.0011 / $1.5015 | Buy Now |
Part Details for IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1 CAD Models
IPD50P04P4L11ATMA1 Part Data Attributes
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IPD50P04P4L11ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPD50P04P4L11ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0106 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
IPD50P04P4L11ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPD50P04P4L11ATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
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A recommended PCB layout for IPD50P04P4L11ATMA1 includes a solid ground plane, wide power traces, and a decoupling capacitor (e.g., 100nF) close to the device.
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The device should be powered up and down slowly (e.g., 10ms) to prevent voltage spikes and ensure proper operation.
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The recommended soldering conditions for IPD50P04P4L11ATMA1 are: peak temperature ≤ 260°C, time above 217°C ≤ 30s, and a soldering iron temperature ≤ 350°C.