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Part Details for IPD50P04P4L-11 by Infineon Technologies AG
Results Overview of IPD50P04P4L-11 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD50P04P4L-11 Information
IPD50P04P4L-11 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50P04P4L-11
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69709593
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Verical | Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 86 Package Multiple: 1 Date Code: 2301 | Americas - 1445 |
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$0.8594 / $1.0051 | Buy Now |
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Bristol Electronics | Min Qty: 5 | 225 |
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$0.4219 / $1.1250 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0106OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 1156 |
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$0.8115 / $2.1640 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0106OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 505 |
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$0.7975 / $1.5950 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0106OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 180 |
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$0.4500 / $1.5000 | Buy Now |
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DISTI #
SMC-IPD50P04P4L-11
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 2236 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 364846 |
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RFQ | |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 1104 |
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$0.8600 / $1.3100 | Buy Now |
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Vyrian | Transistors | 1571 |
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RFQ | |
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Win Source Electronics | OptiMOS-P2 Power-Transistor | 56971 |
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$0.6336 / $0.8184 | Buy Now |
Part Details for IPD50P04P4L-11
IPD50P04P4L-11 CAD Models
IPD50P04P4L-11 Part Data Attributes
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IPD50P04P4L-11
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50P04P4L-11
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0106 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 58 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50P04P4L-11
This table gives cross-reference parts and alternative options found for IPD50P04P4L-11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50P04P4L-11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SUD50P04-09L-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 50 A, 40 V, 0.0094 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | IPD50P04P4L-11 vs SUD50P04-09L-E3 |
| SUD50P04-09L-E3 | Vishay Intertechnologies | $1.7161 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | IPD50P04P4L-11 vs SUD50P04-09L-E3 |
| SUD50P04-08-GE3 | Vishay Intertechnologies | $0.9230 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | IPD50P04P4L-11 vs SUD50P04-08-GE3 |
| SI7463ADP-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 46 A, 40 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | IPD50P04P4L-11 vs SI7463ADP-T1-GE3 |
| NP50P04SLG-E1-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape | IPD50P04P4L-11 vs NP50P04SLG-E1-AY |
| SUD50P04-15-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power | IPD50P04P4L-11 vs SUD50P04-15-E3 |
| AOD4185 | Alpha & Omega Semiconductor | $0.2859 | Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3 | IPD50P04P4L-11 vs AOD4185 |
| AOI4185 | Alpha & Omega Semiconductor | $0.2511 | Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3 | IPD50P04P4L-11 vs AOI4185 |
| SUD50P04-09L | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | IPD50P04P4L-11 vs SUD50P04-09L |
IPD50P04P4L-11 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD50P04P04L-11 is -40°C to 150°C.
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To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to consider the thermal resistance and power dissipation of the device.
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The recommended PCB layout and thermal design for the IPD50P04P04L-11 can be found in the Infineon application note AN2013-01, which provides guidelines for optimal thermal performance.
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To handle the high current handling capability of the IPD50P04P04L-11, it is recommended to use a robust PCB design with adequate copper thickness and to follow the current handling guidelines provided by Infineon.
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The IPD50P04P04L-11 has built-in ESD protection and latch-up prevention measures, but it is still recommended to follow standard ESD handling and prevention practices during assembly and handling.