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Part Details for IPD50P04P4-13 by Infineon Technologies AG
Results Overview of IPD50P04P4-13 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD50P04P4-13 Information
IPD50P04P4-13 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50P04P4-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69135765
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Verical | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 86 Package Multiple: 1 Date Code: 2301 | Americas - 2080 |
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$0.8594 / $1.0051 | Buy Now |
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Bristol Electronics | 2500 |
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RFQ | ||
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Bristol Electronics | Min Qty: 5 | 612 |
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$0.3150 / $1.1250 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0126OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 1664 |
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$0.8115 / $2.1640 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0126OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 489 |
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$0.3900 / $1.5000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0126OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 146 |
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$0.9570 / $1.5950 | Buy Now |
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Chip 1 Exchange | INSTOCK | 95000 |
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RFQ | |
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Win Source Electronics | OptiMOS-P2 Power-Transistor | 20000 |
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$0.5174 / $0.6682 | Buy Now |
Part Details for IPD50P04P4-13
IPD50P04P4-13 CAD Models
IPD50P04P4-13 Part Data Attributes
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IPD50P04P4-13
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50P04P4-13
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0126 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 58 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50P04P4-13
This table gives cross-reference parts and alternative options found for IPD50P04P4-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50P04P4-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD45P4LLF6AG | STMicroelectronics | $1.3213 | Automotive-grade P-channel -40 V, 12 mOhm typ., -50 A STripFET F6 Power MOSFET in a DPAK package | IPD50P04P4-13 vs STD45P4LLF6AG |
| STD45P4LLF6 | STMicroelectronics | Check for Price | Power Field-Effect Transistor | IPD50P04P4-13 vs STD45P4LLF6 |
IPD50P04P4-13 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD50P04P4-13 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms to keep the junction temperature within the specified range.
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A recommended PCB layout for minimizing EMI includes using a solid ground plane, keeping signal traces short and away from the device, and using shielding or filtering components as necessary.
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The IPD50P04P4-13 is rated for a maximum voltage of 40V. Using it in a high-voltage application above this rating may damage the device or affect its reliability.
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To troubleshoot issues, start by verifying the device's operating conditions, checking for proper power supply and signal connections, and reviewing the PCB layout for potential design flaws or manufacturing defects.