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Part Details for IPD50N10S3L-16 by Infineon Technologies AG
Results Overview of IPD50N10S3L-16 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD50N10S3L-16 Information
IPD50N10S3L-16 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50N10S3L-16
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPD50N10S3L16
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Mouser Electronics | MOSFETs N-Ch 100V 50A DPAK-2 OptiMOS-T RoHS: Compliant | 4924 |
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$0.8290 / $2.0300 | Buy Now |
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DISTI #
66435223
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Verical | Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 61 Package Multiple: 1 Date Code: 2201 | Americas - 1960 |
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$1.2117 / $1.4171 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 100V, 0.0199OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 1568 |
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$1.1715 / $3.1240 | Buy Now |
Part Details for IPD50N10S3L-16
IPD50N10S3L-16 CAD Models
IPD50N10S3L-16 Part Data Attributes
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IPD50N10S3L-16
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50N10S3L-16
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 100V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | TO-252-3-11, 3/2 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0199 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 95 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
IPD50N10S3L-16 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD50N10S3L-16 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The recommended gate resistor value for the IPD50N10S3L-16 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Yes, the IPD50N10S3L-16 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
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The recommended dead time for the IPD50N10S3L-16 in a half-bridge configuration is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency.