Part Details for IPD50N04S408ATMA1 by Infineon Technologies AG
Results Overview of IPD50N04S408ATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPD50N04S408ATMA1 Information
IPD50N04S408ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50N04S408ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85X6030
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Newark | Mosfet, N-Ch, 40V, 50A, 175Deg C, 46W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD50N04S408ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 572 |
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$0.3130 / $0.3410 | Buy Now |
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DISTI #
IPD50N04S408ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 50A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5899 In Stock |
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$0.2635 / $0.9400 | Buy Now |
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DISTI #
85X6030
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 85X6030) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 572 Partner Stock |
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$0.4450 / $0.8530 | Buy Now |
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DISTI #
IPD50N04S408ATMA1
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Avnet Americas | - Tape and Reel (Alt: IPD50N04S408ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2195 / $0.2309 | Buy Now |
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DISTI #
726-IPD50N04S408ATMA
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Mouser Electronics | MOSFETs N-Ch 40V 50A DPAK-2 OptiMOS-T2 RoHS: Compliant | 6630 |
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$0.2730 / $0.9200 | Buy Now |
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DISTI #
E02:0323_02198444
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Arrow Electronics | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks | Europe - 2500 |
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$0.0937 / $0.1027 | Buy Now |
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DISTI #
85996239
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Verical | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 841 Package Multiple: 1 Date Code: 2301 | Americas - 79950 |
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$0.4461 | Buy Now |
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DISTI #
69264093
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Verical | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 113 Package Multiple: 1 Date Code: 2252 | Americas - 9420 |
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$0.2606 / $0.6940 | Buy Now |
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DISTI #
85983859
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Verical | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 841 Package Multiple: 1 Date Code: 2201 | Americas - 5000 |
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$0.4461 | Buy Now |
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DISTI #
19735352
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Verical | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 | Americas - 2500 |
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$0.0940 / $0.1031 | Buy Now |
Part Details for IPD50N04S408ATMA1
IPD50N04S408ATMA1 CAD Models
IPD50N04S408ATMA1 Part Data Attributes
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IPD50N04S408ATMA1
Infineon Technologies AG
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Datasheet
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IPD50N04S408ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0079 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
IPD50N04S408ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPD50N04S408ATMA1 is -55°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPD50N04S408ATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
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Yes, IPD50N04S408ATMA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
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Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.