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Part Details for IPD50N04S4-08 by Infineon Technologies AG
Results Overview of IPD50N04S4-08 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPD50N04S4-08 Information
IPD50N04S4-08 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50N04S4-08
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPD50N04S4-08
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Mouser Electronics | MOSFETs N-Ch 40V 50A DPAK-2 OptiMOS-T2 RoHS: Compliant | 17080 |
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$0.2630 / $0.7900 | Buy Now |
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DISTI #
67609661
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Verical | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 130 Package Multiple: 1 Date Code: 2201 | Americas - 2500 |
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$0.5475 / $0.6303 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0079OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 2000 |
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$0.5933 / $1.6950 | Buy Now |
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Chip 1 Exchange | INSTOCK | 20000 |
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RFQ | |
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Cytech Systems Limited | IPD50N04 - 20V-40V N-CHANNEL AUT | 1 |
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RFQ | |
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LCSC | 40V 1 N-channel TO-252 MOSFETs ROHS | 1202 |
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$0.4014 / $0.7212 | Buy Now |
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Win Source Electronics | OptiMOS-T2 Power-Transistor | 52543 |
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$0.2772 / $0.3581 | Buy Now |
Part Details for IPD50N04S4-08
IPD50N04S4-08 CAD Models
IPD50N04S4-08 Part Data Attributes
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IPD50N04S4-08
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50N04S4-08
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0079 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50N04S4-08
This table gives cross-reference parts and alternative options found for IPD50N04S4-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N04S4-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD50N04S4-08 | Rochester Electronics LLC | Check for Price | 50A, 40V, 0.0079ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N04S4-08 vs IPD50N04S4-08 |
IPD50N04S4-08 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD50N04S4-08 is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
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The recommended gate resistor value for the IPD50N04S4-08 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Yes, the IPD50N04S4-08 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.
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To protect the IPD50N04S4-08 from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe packaging and handling the device with ESD-protective equipment.