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Part Details for IPD50N04S3-08 by Infineon Technologies AG
Results Overview of IPD50N04S3-08 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPD50N04S3-08 Information
IPD50N04S3-08 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD50N04S3-08
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPD50N04S3-08
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Mouser Electronics | MOSFETs N-Ch 40V 50A DPAK-2 OptiMOS-T RoHS: Compliant | 2153 |
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$0.5990 / $1.5900 | Buy Now |
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Bristol Electronics | 1368 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 2250 |
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$0.4950 / $1.3500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 1094 |
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$0.7875 / $2.2500 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3163 |
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RFQ | |
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DISTI #
SP000261218
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EBV Elektronik | Trans MOSFET NCH 40V 50A 3Pin TO252 TR (Alt: SP000261218) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD50N04S3-08
IPD50N04S3-08 CAD Models
IPD50N04S3-08 Part Data Attributes
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IPD50N04S3-08
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50N04S3-08
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 111 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD50N04S3-08
This table gives cross-reference parts and alternative options found for IPD50N04S3-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N04S3-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AOI4184 | Alpha & Omega Semiconductor | $0.3401 | Power Field-Effect Transistor, 50A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3 | IPD50N04S3-08 vs AOI4184 |
| IPD50N04S3-09 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 50A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N04S3-08 vs IPD50N04S3-09 |
| IPD50N04S309ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 50A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N04S3-08 vs IPD50N04S309ATMA1 |
| IPD088N04LGBTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD50N04S3-08 vs IPD088N04LGBTMA1 |
IPD50N04S3-08 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD50N04S3-08 is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding overheating.
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The recommended gate resistor value for the IPD50N04S3-08 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, the IPD50N04S3-08 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout considerations.
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To protect the IPD50N04S3-08 from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application.