Part Details for IPD12CN10NG by Infineon Technologies AG
Results Overview of IPD12CN10NG by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IPD12CN10NG Information
IPD12CN10NG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IPD12CN10NG
IPD12CN10NG CAD Models
IPD12CN10NG Part Data Attributes
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IPD12CN10NG
Infineon Technologies AG
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Datasheet
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IPD12CN10NG
Infineon Technologies AG
Power Field-Effect Transistor, 67A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 154 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 67 A | |
| Drain-source On Resistance-Max | 0.0124 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 268 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD12CN10NG
This table gives cross-reference parts and alternative options found for IPD12CN10NG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD12CN10NG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD12CN10NGBUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 67A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | IPD12CN10NG vs IPD12CN10NGBUMA1 |
IPD12CN10NG Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and heat sink design to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and derating the device's power handling according to the temperature derating curve provided in the datasheet.
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Infineon recommends using a gate drive circuit with a high current capability and a low output impedance to ensure fast switching times and low power losses. A suitable gate drive circuit can be found in Infineon's application note AN2013-03 or by consulting with a gate drive IC manufacturer.
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To protect the device from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a voltage clamp, and an overcurrent protection circuit, such as a fuse or a current sense resistor, in conjunction with a monitoring IC.
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Infineon recommends following the soldering and assembly guidelines provided in their application note AN2013-03, which includes information on soldering temperatures, times, and techniques, as well as assembly guidelines for ensuring reliable connections and minimizing thermal resistance.