-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IPD082N10N3GATMA1 by Infineon Technologies AG
Results Overview of IPD082N10N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD082N10N3GATMA1 Information
IPD082N10N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD082N10N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
12AC9706
|
Newark | Mosfet, N-Ch, 100V, 80A, 175Deg C, 125W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:80A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPD082N10N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1753 |
|
$0.7690 / $1.0500 | Buy Now |
|
DISTI #
99AK9888
|
Newark | Mosfet, N-Channel, 100V, 80A, To-252 Rohs Compliant: Yes |Infineon IPD082N10N3GATMA1 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.8050 | Buy Now |
|
DISTI #
IPD082N10N3GATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 80A TO252-3 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
25566 In Stock |
|
$0.7153 / $1.3500 | Buy Now |
|
DISTI #
IPD082N10N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD082N10N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 2500 |
|
$0.5840 | Buy Now |
|
DISTI #
726-IPD082N10N3GA
|
Mouser Electronics | MOSFETs TRENCH >=100V RoHS: Compliant | 2085 |
|
$0.7170 / $1.3200 | Buy Now |
|
DISTI #
E02:0323_08003394
|
Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Date Code: 2516 | Europe - 7500 |
|
$0.6937 | Buy Now |
|
DISTI #
V72:2272_06384005
|
Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2243 Container: Cut Strips | Americas - 56 |
|
$0.6114 / $0.7223 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 5000Reel |
|
$0.5800 / $0.5950 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.5800 / $0.5950 | Buy Now |
|
DISTI #
87138964
|
Verical | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R Min Qty: 310 Package Multiple: 1 Date Code: 2301 | Americas - 42657 |
|
$0.7510 / $1.2113 | Buy Now |
Part Details for IPD082N10N3GATMA1
IPD082N10N3GATMA1 CAD Models
IPD082N10N3GATMA1 Part Data Attributes
|
|
IPD082N10N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD082N10N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, DPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0082 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPD082N10N3GATMA1 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for IPD082N10N3GATMA1 is -40°C to 150°C.
-
Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
-
The recommended gate resistor value for IPD082N10N3GATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
-
Yes, IPD082N10N3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
-
To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protective package.