Part Details for IPD068N10N3GBTMA1 by Infineon Technologies AG
Results Overview of IPD068N10N3GBTMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPD068N10N3GBTMA1 Information
IPD068N10N3GBTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD068N10N3GBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000469892
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EBV Elektronik | Trans MOSFET NCH 100V 90A 3Pin2Tab TO252 (Alt: SP000469892) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for IPD068N10N3GBTMA1
IPD068N10N3GBTMA1 CAD Models
IPD068N10N3GBTMA1 Part Data Attributes
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IPD068N10N3GBTMA1
Infineon Technologies AG
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Datasheet
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IPD068N10N3GBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0068 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD068N10N3GBTMA1
This table gives cross-reference parts and alternative options found for IPD068N10N3GBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD068N10N3GBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD068N10N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPD068N10N3GBTMA1 vs IPD068N10N3G |
IPD068N10N3GBTMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPD068N10N3GBTMA1 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -20°C to 125°C for optimal performance and reliability.
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Proper thermal management is crucial for this device. Ensure good heat dissipation by using a heat sink, thermal interface material, and a well-designed PCB layout. Also, follow the recommended thermal resistance and junction-to-case thermal resistance values provided in the datasheet.
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The recommended gate drive voltage for IPD068N10N3GBTMA1 is between 10V to 15V, with a maximum gate-source voltage of ±20V. However, it's essential to consult the datasheet for specific gate drive requirements and ensure compatibility with your driver circuit.
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Yes, IPD068N10N3GBTMA1 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that your design meets the recommended operating conditions.
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To protect IPD068N10N3GBTMA1 from overvoltage and overcurrent conditions, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism. You can also consider using a gate driver with built-in protection features or a dedicated protection IC.