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Part Details for IPD048N06L3GBTMA1 by Infineon Technologies AG
Results Overview of IPD048N06L3GBTMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD048N06L3GBTMA1 Information
IPD048N06L3GBTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD048N06L3GBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y2020
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Newark | Mosfet, N-Ch, 60V, 90A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD048N06L3GBTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 676 |
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$0.1820 | Buy Now |
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DISTI #
80599113
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Verical | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Min Qty: 275 Package Multiple: 1 | Americas - 676 |
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$0.2750 / $0.2853 | Buy Now |
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Rochester Electronics | IPD048N06L3 G - OptiMOS 3 Power-Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 807 |
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$0.4089 / $0.6595 | Buy Now |
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DISTI #
SP000453334
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EBV Elektronik | Trans MOSFET NCH 60V 90A 3Pin TO252 TR (Alt: SP000453334) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 176 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 90A TO252-3 | 18760 |
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$0.8663 / $1.1189 | Buy Now |
Part Details for IPD048N06L3GBTMA1
IPD048N06L3GBTMA1 CAD Models
IPD048N06L3GBTMA1 Part Data Attributes
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IPD048N06L3GBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD048N06L3GBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 68 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD048N06L3GBTMA1
This table gives cross-reference parts and alternative options found for IPD048N06L3GBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD048N06L3GBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD048N06L3GXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | IPD048N06L3GBTMA1 vs IPD048N06L3GXT |
IPD048N06L3GBTMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPD048N06L3GBTMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPD048N06L3GBTMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, IPD048N06L3GBTMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected package.