Part Details for IPB70N10S3L12ATMA2 by Infineon Technologies AG
Results Overview of IPB70N10S3L12ATMA2 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPB70N10S3L12ATMA2 Information
IPB70N10S3L12ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB70N10S3L12ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AM8605
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Newark | Mosfet, N-Ch, 100V, 70A, To-236 Rohs Compliant: Yes |Infineon IPB70N10S3L12ATMA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.4600 / $3.0900 | Buy Now |
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DISTI #
448-IPB70N10S3L12ATMA2TR-ND
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DigiKey | MOSFET_(75V 120V( Min Qty: 7000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.1978 | Buy Now |
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DISTI #
IPB70N10S3L12ATMA2
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Avnet Americas | Power MOSFET, N Channel, 100 V, 70 A, 11.8 Milliohms, TO-263, 3 Pins, Surface Mount - Tape and Reel (Alt: IPB70N10S3L12ATMA2) RoHS: Compliant Min Qty: 7000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.2312 / $1.2569 | Buy Now |
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DISTI #
726-IPB70N10S3L12AT2
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Mouser Electronics | MOSFETs MOSFET_(75V 120V( RoHS: Compliant | 0 |
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$1.2300 | Order Now |
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DISTI #
SP005549661
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EBV Elektronik | Power MOSFET N Channel 100 V 70 A 118 Milliohms TO263 3 Pins Surface Mount (Alt: SP005549661) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 1000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 1000 |
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$2.0200 | Buy Now |
Part Details for IPB70N10S3L12ATMA2
IPB70N10S3L12ATMA2 CAD Models
IPB70N10S3L12ATMA2 Part Data Attributes
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IPB70N10S3L12ATMA2
Infineon Technologies AG
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Datasheet
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IPB70N10S3L12ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 100V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263, 3/2 PIN | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 12 Weeks | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.0155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 135 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |