Part Details for IPB70N10S3-12 by Infineon Technologies AG
Results Overview of IPB70N10S3-12 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPB70N10S3-12 Information
IPB70N10S3-12 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB70N10S3-12
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB70N10S312
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Mouser Electronics | MOSFETs N-Ch 100V 70A D2PAK-2 OptiMOS-T RoHS: Compliant | 217 |
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$1.2600 / $3.0700 | Buy Now |
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Bristol Electronics | Min Qty: 2 | 254 |
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$1.0125 / $2.7000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.0113OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 298 |
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$1.4985 / $3.2400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.0113OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 203 |
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$1.2600 / $3.6000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.0113OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 103 |
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$1.3200 / $2.2000 | Buy Now |
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Win Source Electronics | OptiMOS-T Power-Transistor | 1945 |
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$2.7083 / $4.0625 | Buy Now |
Part Details for IPB70N10S3-12
IPB70N10S3-12 CAD Models
IPB70N10S3-12 Part Data Attributes
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IPB70N10S3-12
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB70N10S3-12
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3/2 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.0113 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 158 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
IPB70N10S3-12 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IPB70N10S3-12 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the thermal resistance of the heat sink and the PCB layout to minimize thermal impedance.
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The recommended gate drive voltage for the IPB70N10S3-12 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
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Yes, the IPB70N10S3-12 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the gate drive circuitry is designed to minimize switching losses and prevent oscillations.
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To protect the IPB70N10S3-12 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.