Part Details for IPB65R310CFDAATMA1 by Infineon Technologies AG
Results Overview of IPB65R310CFDAATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPB65R310CFDAATMA1 Information
IPB65R310CFDAATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB65R310CFDAATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
86AK9966
|
Newark | Mosfet, N-Ch, 650V, 11.4A, To-263 Rohs Compliant: Yes |Infineon IPB65R310CFDAATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 566 |
|
$1.2900 / $3.0000 | Buy Now |
|
DISTI #
448-IPB65R310CFDAATMA1CT-ND
|
DigiKey | MOSFET N-CH 650V 11.4A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2393 In Stock |
|
$1.0486 / $2.8400 | Buy Now |
|
DISTI #
IPB65R310CFDAATMA1
|
Avnet Americas | - Tape and Reel (Alt: IPB65R310CFDAATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.9245 / $0.9888 | Buy Now |
|
DISTI #
726-IPB65R310CFDAATM
|
Mouser Electronics | MOSFETs N-Ch 650V 11.4A D2PAK-2 RoHS: Compliant | 3016 |
|
$1.0400 / $2.5900 | Buy Now |
|
DISTI #
82119484
|
Verical | Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 Min Qty: 19 Package Multiple: 1 Date Code: 2418 | Americas - 1000 |
|
$1.4900 / $1.9000 | Buy Now |
|
DISTI #
IPB65R310CFDAATMA1
|
IBS Electronics | IPB65R310CFDAATMA1 by Infineon SCT is a CoolMOS power transistor featuring 650V breakdown voltage, low RDS(on) of 310mΩ, , optimized for high efficiency in hard switching topologies. Min Qty: 1000 Package Multiple: 1 | 0 |
|
$1.4300 / $1.4560 | Buy Now |
|
DISTI #
IPB65R310CFDAATMA1
|
Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 1000 |
|
$1.3600 / $2.5900 | Buy Now |
|
DISTI #
SP000879440
|
EBV Elektronik | Trans MOSFET NCH 650V 114A 3Pin TO263 TR (Alt: SP000879440) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 1104 |
|
RFQ |
Part Details for IPB65R310CFDAATMA1
IPB65R310CFDAATMA1 CAD Models
IPB65R310CFDAATMA1 Part Data Attributes
|
|
IPB65R310CFDAATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB65R310CFDAATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3/2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 11.4 A | |
| Drain-source On Resistance-Max | 0.31 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 34.4 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPB65R310CFDAATMA1 Frequently Asked Questions (FAQ)
-
The IPB65R310CFDAATMA1 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
-
The device has a thermal pad on the bottom, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation.
-
Infineon provides a recommended PCB layout in the datasheet, which includes guidelines for pad layout, thermal vias, and decoupling capacitors.
-
Yes, the IPB65R310CFDAATMA1 is designed for high-voltage applications up to 650V, making it suitable for industrial power supplies, motor control, and renewable energy systems.
-
The device has built-in overcurrent and overvoltage protection, but additional external protection circuits may be required depending on the application.