Part Details for IPB65R310CFD by Infineon Technologies AG
Results Overview of IPB65R310CFD by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB65R310CFD Information
IPB65R310CFD by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB65R310CFD
Part # | Distributor | Description | Stock | Price | Buy | |
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Cytech Systems Limited | 5000 |
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RFQ | ||
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LCSC | 700V 11.4A 0.3110V4.4A 104.2W 4V 1 N-channel TO-263 MOSFETs ROHS | 990 |
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$1.2100 / $2.0036 | Buy Now |
Part Details for IPB65R310CFD
IPB65R310CFD CAD Models
IPB65R310CFD Part Data Attributes
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IPB65R310CFD
Infineon Technologies AG
Buy Now
Datasheet
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IPB65R310CFD
Infineon Technologies AG
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 11.4 A | |
Drain-source On Resistance-Max | 0.31 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 34.4 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB65R310CFD
This table gives cross-reference parts and alternative options found for IPB65R310CFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R310CFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPB65R310CFDATMA2 | Infineon Technologies AG | $0.8102 | Power Field-Effect Transistor, TO-263, D2PAK-3 | IPB65R310CFD vs IPB65R310CFDATMA2 |
IPB65R310CFDATMA1 | Infineon Technologies AG | $1.0619 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPB65R310CFD vs IPB65R310CFDATMA1 |
IPB65R310CFD Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPB65R310CFD is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
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The recommended gate drive voltage for the IPB65R310CFD is between 10V and 15V, with a maximum voltage of 20V.
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To protect the IPB65R310CFD from overvoltage and undervoltage conditions, it's recommended to use a voltage regulator or a voltage supervisor, and to implement overvoltage protection (OVP) and undervoltage protection (UVP) circuits.
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The maximum allowed current for the IPB65R310CFD is 65A, with a maximum pulsed current of 130A.