Part Details for IPB60R190C6ATMA1 by Infineon Technologies AG
Results Overview of IPB60R190C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
IPB60R190C6ATMA1 Information
IPB60R190C6ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB60R190C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30T1830
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Newark | Mosfet, n Ch,600V,20.2A, to263, Transistor Polarity:N Channel, Continuous Drain Current Id:20.2A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.17Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon IPB60R190C6ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1188 |
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$1.3600 / $3.2200 | Buy Now |
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DISTI #
IPB60R190C6ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 20.2A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4917 In Stock |
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$1.2740 / $3.2800 | Buy Now |
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DISTI #
IPB60R190C6ATMA1
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Avnet Americas | - Tape and Reel (Alt: IPB60R190C6ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$1.1236 / $1.1946 | Buy Now |
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DISTI #
726-IPB60R190C6ATMA1
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Mouser Electronics | MOSFETs N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant | 980 |
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$1.2700 / $3.2200 | Buy Now |
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DISTI #
E02:0323_00825881
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Arrow Electronics | Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks | Europe - 1000 |
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$1.3186 | Buy Now |
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DISTI #
19038371
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Verical | Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 | Americas - 1000 |
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$2.1202 | Buy Now |
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Rochester Electronics | IPB60R190 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | Call for Availability |
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$1.3200 / $1.6600 | Buy Now |
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Future Electronics | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 Min Qty: 1000 Package Multiple: 1000 |
1000 null |
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$1.2500 / $1.2700 | Buy Now |
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DISTI #
SP000641916
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EBV Elektronik | Transistor MOSFET NChannel 650V 202A 3Pin TO263 TR (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB60R190C6ATMA1
IPB60R190C6ATMA1 CAD Models
IPB60R190C6ATMA1 Part Data Attributes
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IPB60R190C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R190C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 418 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.2 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 59 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB60R190C6ATMA1
This table gives cross-reference parts and alternative options found for IPB60R190C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R190C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP28N65M2 | STMicroelectronics | $2.1554 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package | IPB60R190C6ATMA1 vs STP28N65M2 |
| R6020ENJTL | ROHM Semiconductor | $2.2825 | Power Field-Effect Transistor, 20A I(D), 600V, 0.196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | IPB60R190C6ATMA1 vs R6020ENJTL |
| STB28N65M2 | STMicroelectronics | $3.3209 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package | IPB60R190C6ATMA1 vs STB28N65M2 |
| SIHH21N65EF-T1-GE3 | Vishay Intertechnologies | $4.8225 | Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 | IPB60R190C6ATMA1 vs SIHH21N65EF-T1-GE3 |
| IXKP20N60C5 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IPB60R190C6ATMA1 vs IXKP20N60C5 |
| IXKH20N60C5 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IPB60R190C6ATMA1 vs IXKH20N60C5 |
| IXKP20N60C5 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IPB60R190C6ATMA1 vs IXKP20N60C5 |
| SPP20N60S5XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | IPB60R190C6ATMA1 vs SPP20N60S5XKSA1 |
| RJK60S5DPK-M0-T0 | Renesas Electronics Corporation | Check for Price | 20A, 600V, 0.178ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PSG, 3 PIN | IPB60R190C6ATMA1 vs RJK60S5DPK-M0-T0 |
IPB60R190C6ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB60R190C6ATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
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The recommended gate resistor value for IPB60R190C6ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, IPB60R190C6ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuits are identical to prevent uneven current sharing.
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The maximum allowable voltage transient for IPB60R190C6ATMA1 is ±5% of the maximum rated voltage (600V).