Datasheets
IPB60R099P7ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Part Details for IPB60R099P7ATMA1 by Infineon Technologies AG

Results Overview of IPB60R099P7ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

IPB60R099P7ATMA1 Information

IPB60R099P7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB60R099P7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC7995
Newark Mosfet, N-Ch, 600V, 31A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:31A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.077Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPB60R099P7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2081
  • 1 $3.7000
  • 10 $2.9500
  • 25 $2.6900
  • 50 $2.4300
  • 100 $2.1800
  • 250 $2.0000
$2.0000 / $3.7000 Buy Now
DISTI # 86AK5177
Newark Mosfet, N-Ch, 600V, 31A, To-263 Rohs Compliant: Yes |Infineon IPB60R099P7ATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $1.7500
$1.7500 Buy Now
DISTI # IPB60R099P7ATMA1CT-ND
DigiKey MOSFET N-CH 600V 31A D2PAK Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 674
In Stock
  • 1 $3.6500
  • 10 $2.7540
  • 100 $2.0188
  • 500 $1.8320
  • 1,000 $1.5680
$1.5680 / $3.6500 Buy Now
DISTI # IPB60R099P7ATMA1
Avnet Americas Transistor MOSFET N-CH 600V 31A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R099P7ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel 1000
  • 1,000 $1.4667
  • 2,000 $1.4426
  • 4,000 $1.4189
  • 6,000 $1.4070
  • 8,000 $1.3997
$1.3997 / $1.4667 Buy Now
DISTI # 726-IPB60R099P7ATMA1
Mouser Electronics MOSFETs HIGH POWER_NEW RoHS: Compliant 2637
  • 1 $3.5800
  • 10 $2.7000
  • 25 $2.6200
  • 100 $2.0200
  • 500 $1.7000
  • 1,000 $1.6200
  • 2,000 $1.6100
$1.6100 / $3.5800 Buy Now
DISTI # E02:0323_11882230
Arrow Electronics Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks Date Code: 2337 Europe - 2000
  • 1,000 $1.8240
$1.8240 Buy Now
Future Electronics Single N-Channel 600 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks Container: Reel 1000
Reel
  • 1,000 $1.6400
  • 2,000 $1.6200
$1.6200 / $1.6400 Buy Now
Future Electronics Single N-Channel 600 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks Container: Reel 0
Reel
  • 1,000 $1.6400
  • 2,000 $1.6200
$1.6200 / $1.6400 Buy Now
DISTI # 77301051
Verical Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2337 Americas - 6000
  • 1,000 $1.9278
$1.9278 Buy Now
DISTI # 89515950
Verical Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2337 Americas - 2000
  • 1,000 $2.6030
$2.6030 Buy Now
DISTI # 75724232
Verical Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R Min Qty: 14 Package Multiple: 1 Date Code: 2336 Americas - 995
  • 14 $2.8200
  • 50 $2.7300
  • 100 $2.2600
$2.2600 / $2.8200 Buy Now
Quest Components   518
  • 1 $3.5400
  • 114 $1.6520
  • 304 $1.5340
$1.5340 / $3.5400 Buy Now
Future Electronics Single N-Channel 600 V 99 mOhm 45 nC CoolMOS� Power Mosfet - D2PAK Min Qty: 1000 Package Multiple: 1000 1000
null
  • 1,000 $1.6600
  • 2,000 $1.6300
$1.6300 / $1.6600 Buy Now
DISTI # IPB60R099P7
TME Transistor: N-MOSFET, unipolar, 600V, 20A, 117W, D2PAK Min Qty: 1 0
  • 1 $3.7300
  • 10 $2.9700
  • 50 $2.6100
  • 500 $2.3800
$2.3800 / $3.7300 RFQ
DISTI # SP001664910
EBV Elektronik Transistor MOSFET NCH 600V 31A 3Pin TO263 TR (Alt: SP001664910) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 650V 20A 117W 99m10V10.5A 3.5V 1 N-channel TO-263-3 MOSFETs ROHS 13
  • 1 $5.4751
  • 10 $4.7735
  • 30 $4.3466
  • 100 $3.9875
$3.9875 / $5.4751 Buy Now

Part Details for IPB60R099P7ATMA1

IPB60R099P7ATMA1 CAD Models

IPB60R099P7ATMA1 Part Data Attributes

IPB60R099P7ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB60R099P7ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 105 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB60R099P7ATMA1

This table gives cross-reference parts and alternative options found for IPB60R099P7ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R099P7ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCB099N65S3 onsemi $3.5150 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, D2PAK Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL IPB60R099P7ATMA1 vs FCB099N65S3
IPB60R099P7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 IPB60R099P7ATMA1 vs IPB60R099P7

IPB60R099P7ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB60R099P7ATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.

  • The recommended gate resistor value for IPB60R099P7ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, IPB60R099P7ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuits are properly synchronized.

  • The maximum allowable voltage transient for IPB60R099P7ATMA1 is ±10% of the maximum rated voltage (600V).

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