Part Details for IPB60R099CP by Infineon Technologies AG
Results Overview of IPB60R099CP by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IPB60R099CP Information
IPB60R099CP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB60R099CP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB60R099CP
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Mouser Electronics | MOSFETs N-Ch 650V 31A D2PAK-2 CoolMOS CP RoHS: Compliant | 1383 |
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$3.4600 / $6.8100 | Buy Now |
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Bristol Electronics | 1343 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 31A I(D), 600V, 0.099OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 4 |
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$4.7250 / $9.4500 | Buy Now |
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Greenchips | Date Code: 11+/MY | 1087 |
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$2.4000 | Buy Now |
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Greenchips | Date Code: N | 0 |
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$2.2500 | Buy Now |
Part Details for IPB60R099CP
IPB60R099CP CAD Models
IPB60R099CP Part Data Attributes
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IPB60R099CP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R099CP
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 255 W | |
| Pulsed Drain Current-Max (IDM) | 93 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB60R099CP
This table gives cross-reference parts and alternative options found for IPB60R099CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R099CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB60R099CPATMA1 | Infineon Technologies AG | $3.9932 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB60R099CP vs IPB60R099CPATMA1 |
| IPB60R099CS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | IPB60R099CP vs IPB60R099CS |
| SP000088490 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IPB60R099CP vs SP000088490 |
IPB60R099CP Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPB60R099CP is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
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The recommended gate resistor value for the IPB60R099CP is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, the IPB60R099CP is suitable for high-reliability applications, as it is designed and manufactured with high-quality materials and processes to ensure long-term reliability.
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Protection from overvoltage and overcurrent can be achieved by using a voltage clamp or a surge protector, and implementing overcurrent protection using a current sense resistor and a comparator.