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Transistors / Power Field-Effect Transistors / IPB60R099C7ATMA1
Datasheets
IPB60R099C7ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Part Details for IPB60R099C7ATMA1 by Infineon Technologies AG

Results Overview of IPB60R099C7ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

IPB60R099C7ATMA1 Information

IPB60R099C7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB60R099C7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8899
Newark Mosfet, N-Ch, 650V, 150Deg C, 110W Rohs Compliant: Yes |Infineon IPB60R099C7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1043
  • 1 $4.8600
  • 10 $4.0800
  • 25 $3.8500
  • 50 $3.5800
  • 100 $3.3000
  • 250 $3.1200
  • 500 $2.9300
  • 1,000 $2.3900
$2.3900 / $4.8600 Buy Now
DISTI # IPB60R099C7ATMA1CT-ND
DigiKey MOSFET N-CH 600V 22A TO263-3 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 910
In Stock
  • 1 $5.3500
  • 10 $3.5970
  • 100 $2.5872
  • 500 $2.4648
  • 1,000 $2.1168
$2.1168 / $5.3500 Buy Now
DISTI # IPB60R099C7ATMA1
Avnet Americas Power MOSFET, N Channel, 600 V, 22 A, 0.085 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB60R099C7ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.9606
  • 2,000 $1.9379
  • 4,000 $1.9122
  • 6,000 $1.8895
  • 8,000 $1.8639
$1.8639 / $1.9606 Buy Now
DISTI # 726-IPB60R099C7ATMA1
Mouser Electronics MOSFETs HIGH POWER_NEW RoHS: Compliant 563
  • 1 $5.1500
  • 10 $3.6000
  • 100 $2.5900
  • 500 $2.2500
  • 1,000 $2.1100
  • 2,000 $2.1000
$2.1000 / $5.1500 Buy Now
DISTI # 88070739
Verical Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2439 Americas - 18000
  • 1,000 $2.5938
$2.5938 Buy Now
DISTI # 85993365
Verical Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R Min Qty: 142 Package Multiple: 1 Date Code: 1901 Americas - 5000
  • 142 $2.6500
$2.6500 Buy Now
DISTI # 82119152
Verical Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R Min Qty: 10 Package Multiple: 1 Date Code: 2401 Americas - 1000
  • 10 $3.4500
  • 50 $3.2200
  • 100 $2.7500
  • 500 $2.7400
  • 1,000 $2.5200
$2.5200 / $3.4500 Buy Now
Rochester Electronics IPB60R099 - 22A, 600V, N-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 5000
  • 25 $2.1200
  • 100 $2.0100
  • 500 $1.9100
  • 1,000 $1.8000
  • 10,000 $1.7000
$1.7000 / $2.1200 Buy Now
DISTI # IPB60R099C7
TME Transistor: N-MOSFET, unipolar, 600V, 14A, 110W, D2PAK Min Qty: 1 0
  • 1 $4.3700
  • 10 $3.5300
  • 100 $2.8700
  • 500 $2.7100
$2.7100 / $4.3700 RFQ
DISTI # HVMOS1191
Rutronik N-CH 600V 22A 85mOhm TO263-3 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel Stock DE - 1000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 1,000 $2.1800
$2.1800 Buy Now
DISTI # IPB60R099C7ATMA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1000
  • 1 $4.7600
  • 10 $3.4500
  • 50 $3.2200
  • 100 $2.7500
  • 200 $2.7500
  • 500 $2.7400
  • 1,000 $2.5200
$2.5200 / $4.7600 Buy Now
DISTI # SP001297998
EBV Elektronik Power MOSFET N Channel 600 V 22 A 0085 ohm TO263 D2PAK Surface Mount (Alt: SP001297998) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 3502
RFQ

Part Details for IPB60R099C7ATMA1

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IPB60R099C7ATMA1 Part Data Attributes

Parametric Data
IPB60R099C7ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB60R099C7ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-263, D2PAK-3/2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 83 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB60R099C7ATMA1

This table gives cross-reference parts and alternative options found for IPB60R099C7ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R099C7ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP65R095C7XKSA1 Infineon Technologies AG $2.9100 Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB60R099C7ATMA1 vs IPP65R095C7XKSA1
IPP60R099C7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IPB60R099C7ATMA1 vs IPP60R099C7
IPW60R099C7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, IPB60R099C7ATMA1 vs IPW60R099C7
IPT65R105G7 Infineon Technologies AG Check for Price Power Field-Effect Transistor IPB60R099C7ATMA1 vs IPT65R105G7

IPB60R099C7ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB60R099C7ATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.

  • The recommended gate resistor value for IPB60R099C7ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, IPB60R099C7ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuitry is designed to handle the increased current.

  • The maximum allowable voltage transient for IPB60R099C7ATMA1 is ±5% of the maximum rated voltage (600V).

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