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Transistors / Power Field-Effect Transistors / IPB60R040C7ATMA1
Datasheets
IPB60R040C7ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Part Details for IPB60R040C7ATMA1 by Infineon Technologies AG

Results Overview of IPB60R040C7ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IPB60R040C7ATMA1 Information

IPB60R040C7ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB60R040C7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7103
Newark Mosfet, N-Ch, 600V, 50A, 150Deg C, 227W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPB60R040C7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 16
  • 1 $2.6200
$2.6200 Buy Now
DISTI # 86AK5175
Newark Mosfet, N-Ch, 600V, 50A, To-263 Rohs Compliant: Yes |Infineon IPB60R040C7ATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $7.7300
$7.7300 Buy Now
DISTI # IPB60R040C7ATMA1CT-ND
DigiKey MOSFET N-CH 600V 50A TO263-3 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 936
In Stock
  • 1 $9.5900
  • 10 $6.9770
  • 100 $5.8552
  • 1,000 $4.8412
$4.8412 / $9.5900 Buy Now
DISTI # 93AC7103
Avnet Americas Trans MOSFET N 650V 50A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 93AC7103) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack 16 Partner Stock
  • 1 $12.4000
  • 10 $9.6900
  • 25 $9.2200
  • 50 $8.5000
  • 100 $7.7900
$7.7900 / $12.4000 Buy Now
DISTI # IPB60R040C7ATMA1
Avnet Americas Trans MOSFET N 650V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R040C7ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 1,000 $4.6875
  • 2,000 $4.6107
  • 4,000 $4.5348
  • 6,000 $4.4582
  • 8,000 $4.3816
$4.3816 / $4.6875 Buy Now
DISTI # 726-IPB60R040C7ATMA1
Mouser Electronics MOSFETs HIGH POWER_NEW RoHS: Compliant 535
  • 1 $9.4000
  • 10 $6.8400
  • 25 $6.7600
  • 100 $5.3400
  • 500 $5.0300
  • 1,000 $4.9400
$4.9400 / $9.4000 Buy Now
DISTI # V72:2272_13989133
Arrow Electronics Trans MOSFET N-CH 600V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2403 Container: Cut Strips Americas - 737
  • 1 $5.5640
  • 10 $5.0600
  • 25 $5.0060
  • 100 $4.9730
  • 250 $4.9400
  • 500 $4.9070
$4.9070 / $5.5640 Buy Now
DISTI # 77264642
Verical Trans MOSFET N-CH 600V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2351 Americas - 980
  • 5 $10.2000
  • 10 $7.0500
  • 50 $6.6500
  • 200 $6.5800
  • 500 $5.8500
$5.8500 / $10.2000 Buy Now
Rochester Electronics IPB60R040 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 4
  • 25 $5.0400
  • 100 $4.7800
  • 500 $4.5300
  • 1,000 $4.2800
  • 10,000 $4.0300
$4.0300 / $5.0400 Buy Now
Future Electronics IPB60R040 Series N-Channel 650 V 50 A Surface Mount Power MosFet - PG-TO263-3 Min Qty: 1000 Package Multiple: 1000 1000
null
  • 1,000 $4.6600
$4.6600 Buy Now
DISTI # IPB60R040C7ATMA1
IBS Electronics IPB60R040 SERIES N-CHANNEL 650 V 50 A SURFACE MOUNT POWER MOSFET - PG-TO263-3 Min Qty: 1000 Package Multiple: 1 1000
  • 1,000 $6.0580
$6.0580 Buy Now
DISTI # IPB60R040C7ATMA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 980
  • 1 $10.2000
  • 10 $7.0500
  • 50 $6.6500
  • 200 $6.5800
  • 500 $5.8500
  • 1,000 $5.8400
  • 2,000 $5.8300
$5.8300 / $10.2000 Buy Now
DISTI # SP001277610
EBV Elektronik Trans MOSFET N 650V 50A 3Pin TO263 TR (Alt: SP001277610) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 650V 50A TO263-3 / N-Channel 650 V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3 3773
  • 5 $12.0954
  • 11 $9.9245
  • 16 $9.6143
  • 22 $9.3042
  • 28 $8.9941
  • 38 $8.0636
$8.0636 / $12.0954 Buy Now

Part Details for IPB60R040C7ATMA1

IPB60R040C7ATMA1 CAD Models

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IPB60R040C7ATMA1 Part Data Attributes

Parametric Data
IPB60R040C7ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB60R040C7ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 249 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 211 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB60R040C7ATMA1

This table gives cross-reference parts and alternative options found for IPB60R040C7ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R040C7ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP60R040C7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IPB60R040C7ATMA1 vs IPP60R040C7
IPW60R040C7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, IPB60R040C7ATMA1 vs IPW60R040C7

IPB60R040C7ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB60R040C7ATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.

  • The recommended gate resistor value for IPB60R040C7ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, IPB60R040C7ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuits are properly synchronized.

  • The maximum allowable voltage transient for IPB60R040C7ATMA1 is ±10% of the maximum rated voltage (600V).

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