Part Details for IPB26CN10NGATMA1 by Infineon Technologies AG
Results Overview of IPB26CN10NGATMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IPB26CN10NGATMA1 Information
IPB26CN10NGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB26CN10NGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000277692
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EBV Elektronik | Trans MOSFET NCH 100V 35A 3Pin TO263 TR (Alt: SP000277692) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Part Details for IPB26CN10NGATMA1
IPB26CN10NGATMA1 CAD Models
IPB26CN10NGATMA1 Part Data Attributes
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IPB26CN10NGATMA1
Infineon Technologies AG
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Datasheet
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IPB26CN10NGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPB26CN10NGATMA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The IPB26CN10NGATMA1 requires a specific biasing scheme to achieve optimal switching performance. Refer to the datasheet's application circuit and biasing diagram, and ensure that the gate driver is properly configured to provide the recommended voltage and current levels.
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Monitor the device's junction temperature (Tj), case temperature (Tc), and power dissipation (Pd) to prevent overheating. Use thermal monitoring ICs or thermistors to track temperature, and ensure that the device is operated within the recommended safe operating area (SOA).
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Follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that the device is properly grounded during assembly, and consider using ESD protection devices or diodes to protect the IPB26CN10NGATMA1 from electrostatic discharge.
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Store the IPB26CN10NGATMA1 in a dry, cool place, away from direct sunlight and moisture. Avoid exposing the device to extreme temperatures, humidity, or physical stress. Follow Infineon's recommended storage and handling guidelines to prevent damage and ensure long-term reliability.