Part Details for IPB180P04P403ATMA1 by Infineon Technologies AG
Results Overview of IPB180P04P403ATMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
IPB180P04P403ATMA1 Information
IPB180P04P403ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB180P04P403ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB180P04P403ATMA1
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Avnet Americas | Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180P04P403ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$1.3185 / $1.4106 | Buy Now |
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DISTI #
87030898
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Verical | Trans MOSFET P-CH 40V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R Min Qty: 199 Package Multiple: 1 Date Code: 2201 | Americas - 16000 |
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$1.8875 | Buy Now |
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DISTI #
87030896
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Verical | Trans MOSFET P-CH 40V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R Min Qty: 199 Package Multiple: 1 Date Code: 2301 | Americas - 8860 |
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$1.8875 | Buy Now |
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Rochester Electronics | IPB180P04P - OptiMOS P-Channel 40V Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 24860 |
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$1.2100 / $1.5100 | Buy Now |
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DISTI #
SP000840202
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EBV Elektronik | Trans MOSFET PCH 40V 180A 7Pin6Tab TO263 (Alt: SP000840202) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB180P04P403ATMA1
IPB180P04P403ATMA1 CAD Models
IPB180P04P403ATMA1 Part Data Attributes
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IPB180P04P403ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPB180P04P403ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-7/6 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
IPB180P04P403ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB180P04P403ATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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A recommended PCB layout for IPB180P04P403ATMA1 includes a solid ground plane, wide power traces, and a decoupling capacitor of at least 10uF placed close to the device.
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Overvoltage protection can be achieved using a voltage regulator or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator.
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The recommended gate drive voltage for IPB180P04P403ATMA1 is between 10V and 15V, with a rise and fall time of less than 10ns.