Part Details for IPB180P04P4-03 by Infineon Technologies AG
Results Overview of IPB180P04P4-03 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IPB180P04P4-03 Information
IPB180P04P4-03 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB180P04P4-03
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | Min Qty: 2 | 43 |
|
$1.7920 / $3.5840 | Buy Now |
|
|
Quest Components | 34 |
|
$2.4000 / $4.8000 | Buy Now |
Part Details for IPB180P04P4-03
IPB180P04P4-03 CAD Models
IPB180P04P4-03 Part Data Attributes
|
|
IPB180P04P4-03
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB180P04P4-03
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-263 | |
| Package Description | GREEN, PLASTIC PACKAGE-7 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
IPB180P04P4-03 Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a large copper area for heat dissipation is recommended. The drain pad should be connected to a large copper area on the bottom layer to improve thermal performance.
-
The device requires a bias voltage of 5V to 15V on the gate pin, and a current limit resistor should be used to limit the gate current to 10mA. A 10kΩ to 100kΩ resistor is recommended.
-
The maximum allowed power dissipation is 180W, but this can be increased with proper heat sinking and thermal management. A thermal impedance of 1.5°C/W or lower is recommended.
-
Yes, the IPB180P04P4-03 is suitable for high-frequency switching applications up to 100kHz. However, the device's switching characteristics and parasitic inductances should be considered in the design.
-
A voltage clamp or TVS diode can be used to protect the device from overvoltage. Overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.