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Part Details for IPB17N25S3-100 by Infineon Technologies AG
Results Overview of IPB17N25S3-100 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPB17N25S3-100 Information
IPB17N25S3-100 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB17N25S3-100
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB17N25S3-100
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Mouser Electronics | MOSFETs N-Ch 250V 17A D2PAK-2 RoHS: Compliant | 803 |
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$0.9810 / $2.2500 | Buy Now |
Part Details for IPB17N25S3-100
IPB17N25S3-100 CAD Models
IPB17N25S3-100 Part Data Attributes
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IPB17N25S3-100
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB17N25S3-100
Infineon Technologies AG
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
IPB17N25S3-100 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB17N25S3-100 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1 K/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPB17N25S3-100 is in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, IPB17N25S3-100 is a high-reliability device, suitable for use in automotive and industrial applications, and meets the requirements of AEC-Q101 and IEC 60747-9 standards.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.